3056 Datasheet | Specifications & PDF Download

NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P3056LS TO-263 D PRODUCT SUMMARY V(BR)DSS 25 RDS(ON) 50mΩ ID 12A 1. GATE 2.

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PRELIMINARY CYBT-483039-02/CYBT-483056-02/ CYBT-483062-02 EZ-BT™ XR WICED® Module General Description The CYBT-483039-02/CYBT-483056-02/CYBT-48306

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2N3055/6 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar N

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Data Sheet 27612A† 3046, 3056, AND 3058 HALL EFFECT GEAR-TOOTH SENSORS –ZERO SPEED XX V CC 12 3 SUPPLY GROUND OUTPUT Dwg. PH-012 Pinning is sh

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N-Channel 30-V (D-S) MOSFET DTC3056 www.din-tek.jp PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.020 at VGS = 4.5 V 0.016 at VGS = 10 V ID (A)a 8.1 8.

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Surface Mount Zener Diode COMCHIP www.comchip.com.tw CZRA3011 Thru CZRA3100 Voltage: 11 - 100 Volts Power: 3.0 Watt Features - For surf ace mounted

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NTE3056 thru NTE3060 0.3” Single Digit Numeric Display, Seven Segment, Common Cathode Description: The NTE3056 through NTE3060 are 0.3 inch (7.62mm) h

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FETek Technology Corp. Features  Advanced Trench MOS Technology  Low Gate Charge  Low RDS(ON)  100% EAS Guaranteed  Green Device Available Applic

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Zener Diodes Composite Elements MA111 MA3056W Silicon planer type Constant voltage, constant current, waveform cripper and surge absorption circuit

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April 2010 Renesas Electronics Power MOSFETs and IGBT for PDP Merits Power MOSFET Low ON resistance Low Qg High avalanche tolerance IGBT Low VCE (sat

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3056 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3056 2SK3056-S 2

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Product Summary BVDSS -30V RDS(ON) MAX 50mΩ @ VGS =-10V 70mΩ @ VGS =-4.5V ID MAX TA = +25°C -4.3A -3.7A Description and Applications This new gene

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