* Low On-State Resistance RDS(on)1 = 34 mΩ MAX. (VGS = 10 V, ID = 16 A) RDS(on)2 = 50 mΩ MAX. (VGS = 4.0 V, ID = 16 A)
* Low Ciss : Ciss = 920 pF TYP.
* Built-in Gate Protection Diode ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (VGS = 0 V) Gate to Source Vo
2SK3056
NEC
68.98 KB
N-channel mosfet.
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3056 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3056 2SK3056-S 2.
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