* Low on-state resistance RDS(on)1 = 17 mΩ MAX. (VGS = 10 V, ID = 23 A) RDS(on)2 = 27 mΩ MAX. (VGS = 4 V, ID = 23 A)
* Low Ciss: Ciss = 2100 pF TYP.
* Built-in gate protection diode
* Isolated TO-220 package ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltag
2SK3057
NEC
63.97 KB
N-channel mosfet.
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3057 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3057 PACKAGE Iso.
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