30P Datasheet | Specifications & PDF Download

OB2530P High Precision CC/CV Primary-Side Power Switch GENERAL DESCRIPTION OB2530P is a high performance offline PSR power switch for low power AC/DC

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AGM30P05A ● General Description The AGM30P05A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(O

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Kinetix Rotary Motion Specifications MP-Series Low Inertia Motors MP-Series (Bulletin MPL) low-inertia high-output brushless servo motors use innovat

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PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH 88N30P IXTK 88N30P IXTQ 88N30P IXTT 88N30P V DSS ID25 RDS(on) = 300 V = 88 A

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www.DataSheet4U.com PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTK 102N30P VDSS = 300 V ID25 = 102 A RDS(on) ≤ 33 mΩ Symbo

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AGM30P18S ● General Description The AGM30P18S combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(O

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PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Preliminary Data Sheet IXFH 88N30P IXFK 88N30P VDSS ID25 www.DataSh

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 40mΩ(Max) ·Fast Swi

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PD- 95716 IRFPE30PbF • Lead-Free www.DataSheet4U.com www.irf.com 1 8/3/04 IRFPE30PbF 2 www.irf.com IRFPE30PbF www.irf.com 3 IRFPE30PbF 4

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PD - 97369 IRLB4030PbF Applications l DC Motor Drive www.datasheet4u.com l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power

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Advanced Technical Information PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast recovery intrinsic diode IXFH 52N30P IXFV 52N30P IXFV

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MUR3005PT-MUR3060PT High-reliability discrete products and engineering services since 1977 30A ULTRA FAST RECTIFIERS FEATURES  Available as “HR” (

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Features High s urge capacity. For us e in low voltage, high frequency inverters , free 1wheeling, and polarity protection applications . Metal s ilic

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MTB30P06V, MTBV30P06V Power MOSFET 30 Amps, 60 Volts P−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and comm

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JMTP130P04A Description JMT P-channel Enhancement Mode Power MOSFET Features  VDS= -40V, ID= -40A RDS(ON) < 14.3mΩ @ VGS = -10V RDS(ON) < 22mΩ @ V

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PolarTM Power MOSFET HiPerFETTM IXFK140N30P IXFX140N30P N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode VDSS = ID25 = ≤ RDS(on) t

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Advanced Technical Information www.DataSheet4U.com PolarHTTM HiPerFET IXFR 102N30P Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode VDSS

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HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Phase leg Part number DPG30P300PJ 1 23 DPG30P300PJ VRRM I FAV t rr = 2x

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Ultra High Performance BGA Cooling Solutions w/ maxiGRIP™ Attachment ATS PART # ATS-50230P-C2-R0 Features & Benefits » maxiFLOW™ design features a low

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IRLML0030PbF-1 VDS 30 V HEXFET® Power MOSFET VGS Max ± 20 V G1 RDS(on) max (@VGS = 10V) 27 mΩ 3D RDS(on) max (@VGS = 4.5V) 40 mΩ S2 Micro

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