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Thinki Semiconductor

IRF830PBF Datasheet Preview

IRF830PBF Datasheet

N-Channel Type Power MOSFET

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IRF830PBF
®
Pb Free Plating Product
IRF830PBF
Pb
5.0A,500V Heatsink N-Channel Type Power MOSFET
Features
̰ RDS(on) (Max 1.5 ˟ )@VGS=10V
̰ Gate Charge (Typical 18.5nC)
̰ Improved dv/dt Capability
̰ High ruggedness
̰ 100% Avalanche Tested
1. Gate {
{ 2. Drain
̻
ඔ̵
̻
̻
{ 3. Source
BVDSS = 500V
RDS(ON) = 1.5 ohm
ID = 5.0A
General Description
This N-channel enhancement mode field-effect power transistor
using THINKI Semiconductor advanced planar stripe, DMOS technol-
ogy intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged
avalanche characteristics. The TO-220C pkg is well suited for
adaptor power unit and small power inverter application.
TO-220C
23
1
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
Thermal Characteristics
Symbol
RTJC
RTCS
RTJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction-to-Ambient
Min.
-
-
-
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Value
500
5.0
3.4
21.2
±30
390
9.84
4.5
98.4
0.78
- 55 ~ 150
300
Value
Typ.
-
0.5
-
Max.
1.27
-
62
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/6
http://www.thinkisemi.com/




Thinki Semiconductor

IRF830PBF Datasheet Preview

IRF830PBF Datasheet

N-Channel Type Power MOSFET

No Preview Available !

IRF830PBF
®
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Parameter
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
ȟ BVDSS/ Breakdown Voltage Temperature
ȟ TJ coefficient
IDSS Drain-Source Leakage Current
IGSS
Gate-Source Leakage, Forward
Gate-source Leakage, Reverse
On Characteristics
Test Conditions
VGS = 0V, ID = 250uA
ID = 250uA, referenced to 25 °C
VDS = 500V, VGS = 0V
VDS = 400V, TC = 125 °C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
VGS(th) Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-state Resis-
tance
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Dynamic Characteristics
VDS = VGS, ID = 250uA
VGS =10 V, ID = 2.65A
VGS =0 V, VDS =25V, f = 1MHz
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge(Miller Charge)
VDD =250V, ID =5.0A, RG =25 ˟
see fig. 13.
(Note 4, 5)
VDS =400V, VGS =10V, ID =5.3A
see fig. 12.
(Note 4, 5)
Min
500
-
-
-
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
Typ Max Units
--V
0.47 - V/°C
- 1 uA
- 10 uA
- 100 nA
-
-100
nA
- 4.0
1.2 1.5
V
˟
608 -
75 -
25 -
pF
16 42
49 108
60 130
49 108
18.5 23
4-
8-
ns
nC
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
Test Conditions
IS
Continuous Source Current
Integral Reverse p-n Junction
ISM
Pulsed Source Current
Diode in the MOSFET
VSD
Diode Forward Voltage
IS =5.3A, VGS =0V
trr Reverse Recovery Time
Qrr
Reverse Recovery Charge
IS=5.3A, VGS=0V, dIF/dt=100A/us
NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L = 25mH, IAS =5.3A, VDD = 50V, RG = 50 ˟ , Starting TJ = 25°C
3. ISD ˺ 5.3A, di/dt ˺ 300A/us, VDD ˺ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width ˺ 300us, Duty Cycle ˺ 2%
5. Essentially independent of operating temperature.
Min.
-
-
-
-
-
Typ.
-
-
-
302
1.8
Max.
5.3
21.2
1.5
-
-
Unit.
A
V
ns
uC
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 2/6
http://www.thinkisemi.com/


Part Number IRF830PBF
Description N-Channel Type Power MOSFET
Maker Thinki Semiconductor
Total Page 6 Pages
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