̰ RDS(on) (Max 1.5 ˟ )@VGS=10V ̰ Gate Charge (Typical 18.5nC) ̰ Improved dv/dt Capability ̰ High ruggedness ̰ 100% Avalanche Tested 1. Gate { { 2. Drain ̻ ඔ̵ ̻ ̻ { 3. S.

This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche c.

IRF830P-HF-3

IRF830

IRF8301MPbF

IRF8301MTRPBF

IRF8302MPBF

IRF8304MPBF

IRF8306MPBF

IRF8308MPBF

IRF8308MTRPbF

IRF830A

IRF830AL

IRF830APBF

IRF830AS