30S1 Datasheet | Specifications & PDF Download

WMSC030S12B1P N-Channel Silicon Carbide MOSFET Module Rev.02 - 24 September 2024 Product data sheet 1. General description WeEnPACK-B1 module with W

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FGH30S130P — 1300 V, 30 A Shorted-anode IGBT November 2014 FGH30S130P 1300 V, 30 A Shorted-anode IGBT Features • High Speed Switching • Low Saturat

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FGA30S120P Shorted AnodeTM IGBT FGA30S120P Shorted AnodeTM IGBT Features • High speed switching • Low saturation voltage: VCE(sat) =1.75V @ IC = 30A

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UNISONIC TECHNOLOGIES CO., LTD MGBR30S120C Preliminary DUAL MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR30S120C is a dual mos gated barr

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FGH30S150P — 1500 V, 30 A Shorted-anode IGBT March 2016 FGH30S150P 1500 V, 30 A Shorted-anode IGBT Features • High Speed Switching • Low Saturation

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JANUARY 2014 MMD130S 130A Rectifier Diode Module Version 03 RoHS Compliant FEATURES □ Low Forward Voltage □ High Surge Current Capability □ Low L

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6ED2230S12T 1200 V Three Phase Gate Driver with Integrated Bootstrap Diode and OCP Features • Infineon Thin-Film-SOI technology • Fully operational

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Bulletin I25156 rev. C 03/03 PHASE CONTROL THYRISTORS ST330S SERIES Stud Version Features Center amplifying gate Hermetic metal case with ceramic i

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www.vishay.com VS-ST330SPbF Series Vishay Semiconductors Phase Control Thyristors (Stud Version), 330 A TO-118 (TO- 209AE) PRIMARY CHARACTERISTICS

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JANUARY 2014 MMD130S 130A Rectifier Diode Module Version 03 RoHS Compliant FEATURES □ Low Forward Voltage □ High Surge Current Capability □ Low L

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Bulletin I25156 rev. C 03/03 PHASE CONTROL THYRISTORS ST330S SERIES Stud Version Features Center amplifying gate Hermetic metal case with ceramic i

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Bulletin I25156 rev. C 03/03 PHASE CONTROL THYRISTORS ST330S SERIES Stud Version Features Center amplifying gate Hermetic metal case with ceramic i

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JANUARY 2014 MMD130S 130A Rectifier Diode Module Version 03 RoHS Compliant FEATURES □ Low Forward Voltage □ High Surge Current Capability □ Low L

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IGBT - Shorted-Anode 1300 V, 30 A FGH30S130P Description Using advanced field stop trench and shorted−anode technology, ON Semiconductor’s shorted−ano

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RU30S15H P-Channel Advanced Power MOSFET Features • -30V/-15A, RDS (ON) =15mΩ(Typ.)@VGS=-10V RDS (ON) =22mΩ(Typ.)@VGS=-4.5V • Low On-Resistance • Sup

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Bulletin I25156 rev. C 03/03 PHASE CONTROL THYRISTORS ST330S SERIES Stud Version Features Center amplifying gate Hermetic metal case with ceramic i

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www.vishay.com VS-ST330SPbF Series Vishay Semiconductors Phase Control Thyristors (Stud Version), 330 A TO-118 (TO- 209AE) PRIMARY CHARACTERISTICS

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UNISONIC TECHNOLOGIES CO., LTD TGBR30S150C Preliminary DUAL TRENCH MOS SCHOTTKY BARRIER RECTIFIER  DESCRIPTION The UTC TGBR30S150C is a dual tren

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