.
Ruichips
RU30S4H - P-Channel Advanced Power MOSFET
RU30S4H P-Channel Advanced Power MOSFET MOSFET Features • -30V/-4.8A, RDS (ON) =50mΩ (Typ.) @ VGS=-10V RDS (ON) =80mΩ (Typ.) @ VGS=-4.5V • Super High.
MOSPEC
S30S45 - Schottky Barrier Rectifiers
MOSPEC Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epit.
UNISONIC TECHNOLOGIES
MGBR30S45C - DUAL MOS GATED BARRIER RECTIFIER
UNISONIC TECHNOLOGIES CO., LTD MGBR30S45C Preliminary DIODE DUAL MOS GATED BARRIER RECTIFIER DESCRIPTION The U TC MGBR30S45C is a du al mos gated .
Huajing Microelectronics
2CZ30S45A8 - Silicon Schottky rectifier diode
N 2CZ30S45 A8 ○R 2CZ30S45A8 ， 。 、 、。 ● ● ● ● VRRM IF（AV） VF（MAX） 45 2×15 0.63 V A V -10℃～40℃ 1 ＜85％ 265℃ （Per Diode） （，.
Vishay
TV050B030S4PT - Transient Voltage Suppressor
New Product TV050B...S4PT Series Vishay General Semiconductor PAR® Transient Voltage Suppressor Bare Die (50 mils x 50 mils) a ce db A (2) C (1) .
CITC
CSF30S45CT-A - Super Low Barrier High Voltage Power Rectifier
Chip Integration Technology Corporation CSF30S45CT-A Super Low Barrier High Voltage Power Rectifier Main Product Characteristics IF(AV) VRRM TJ V(T.
CITC
CS30S45CT-A - MOS Schottky Rectifier
Chip Integration Technology Corporation CS30S45CT-A 30A MOS Schottky Rectifier Main Product Characteristics IF(AV) VRRM TJ V(Typ) 2x15A 45V 150OC .
MOSPEC
S30S40 - Schottky Barrier Rectifiers
MOSPEC Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epit.
