30S4 Datasheet | Specifications & PDF Download

MOSPEC Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epit

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Chip Integration Technology Corporation CSF30S45CT-A Super Low Barrier High Voltage Power Rectifier Main Product Characteristics IF(AV) VRRM TJ V(T

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MOSPEC Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epit

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N 2CZ30S45 A8 ○R 2CZ30S45A8 ， 。 、 、。 ● ● ● ● VRRM IF（AV） VF（MAX） 45 2×15 0.63 V A V -10℃～40℃ 1 ＜85％ 265℃ （Per Diode） （，

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New Product TV050B S4PT Series Vishay General Semiconductor PAR® Transient Voltage Suppressor Bare Die (50 mils x 50 mils) a ce db A (2) C (1)

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Chip Integration Technology Corporation CS30S45CT-A 30A MOS Schottky Rectifier Main Product Characteristics IF(AV) VRRM TJ V(Typ) 2x15A 45V 150OC

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UNISONIC TECHNOLOGIES CO., LTD MGBR30S45C Preliminary DIODE DUAL MOS GATED BARRIER RECTIFIER  DESCRIPTION The U TC MGBR30S45C is a du al mos gated

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RU30S4H P-Channel Advanced Power MOSFET MOSFET Features • -30V/-4.8A, RDS (ON) =50mΩ (Typ.) @ VGS=-10V RDS (ON) =80mΩ (Typ.) @ VGS=-4.5V • Super High

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