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RU30S4H P-Channel Advanced Power MOSFET

RU30S4H Description

RU30S4H P-Channel Advanced Power MOSFET MOSFET .
SOP-8 Applications. Power Management.

RU30S4H Features

* -30V/-4.8A, RDS (ON) =50mΩ (Typ. ) @ VGS=-10V RDS (ON) =80mΩ (Typ. ) @ VGS=-4.5V
* Super High Dense Cell Design
* Reliable and Rugged

RU30S4H Applications

* Power Management. Absolute Maximum Ratings Dual P-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Curre

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Datasheet Details

Part number
RU30S4H
Manufacturer
Ruichips
File Size
287.69 KB
Datasheet
RU30S4H-Ruichips.pdf
Description
P-Channel Advanced Power MOSFET

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P-Channel Advanced Power MOSFET Ruichips
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