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RU30E4B - N-Channel MOSFET

RU30E4B Description

RU30E4B-VB RU30E4B-VB Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.030 at VGS = 10 V 30 0.033 at V.

RU30E4B Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* 100 % Rg Tested

RU30E4B Applications

* DC/DC Converter D G1 S2 3D Top View G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C

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Datasheet Details

Part number
RU30E4B
Manufacturer
VBsemi
File Size
227.39 KB
Datasheet
RU30E4B-VBsemi.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET VBsemi
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