RU30E4B
VBsemi
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N-channel mosfet.
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RU30E40L - N-Channel Advanced Power MOSFET
(Ruichips)
RU30E40L
N-Channel Advanced Power MOSFET
MOSFET
Features
• 30V/60A, RDS (ON) =5mΩ(Typ.)@VGS=10V RDS (ON) =10mΩ(Typ.)@VGS=4.5V
• Super High Dense Cell.
RU30E4B - N-Channel Advanced Power MOSFET
(Ruichips)
RU30E4B
N-Channel Advanced Power MOSFET
Features
• 30V/4A,
RDS (ON) =30mΩ(Typ.)@VGS=10V RDS (ON) =55mΩ(Typ.)@VGS=4.5V
• Super High Dense Cell Design .
RU30E20H - N-Channel Advanced Power MOSFET
(Ruichips)
RU30E20H
N-Channel Advanced Power MOSFET
Features
• 30V/20A, RDS (ON) =4.6mΩ(Typ.)@VGS=10V RDS (ON) =5.8mΩ(Typ.)@VGS=4.5V RDS (ON) =15mΩ(Typ.)@VGS=2..
RU30E30L - N-Channel Advanced Power MOSFET
(Ruichips)
RU30E30L
N-Channel Advanced Power MOSFET
MOSFET
Features
• 30V/30A, RDS (ON) =16mΩ(tpy.)@VGS=10V RDS (ON) =26mΩ(tpy.)@VGS=4.5V
• Super High Dense Cel.
RU30E60M2 - N-Channel Advanced Power MOSFET
(Ruichips)
RU30E60M2
N-Channel Advanced Power MOSFET
Features
• 30V/60A,
RDS (ON) =3mΩ(Typ.)@VGS=10V RDS (ON) =6mΩ(Typ.)@VGS=4.5V
• Super High Dense Cell Design.
RU30E7H - N-Channel Advanced Power MOSFET
(Ruichips)
RU30E7H
N-Channel Advanced Power MOSFET
MOSFET
Features
• 30V/7.8A, RDS (ON) =16mΩ (Typ.) @ VGS=10V RDS (ON) =25mΩ (Typ.) @ VGS=4.5V
• Super High Den.
RU30 - Fast-Recovery Rectifier Diodes
(Sanken electric)
.
RU30100L - N-Channel Advanced Power MOSFET
(Ruichips)
RU30100L
N-Channel Advanced Power MOSFET
MOSFET
Features
• 30V/100A, RDS (ON) =2.2 mΩ(Typ.)@VGS=10V RDS (ON) =4 mΩ(Typ.)@VGS=4.5V
• Super High Dense .
RU30100R - N-Channel Advanced Power MOSFET
(Ruichips)
RU30100R
N-Channel Advanced Power MOSFET
MOSFET
Features
• 30V/110A, RDS (ON) =4 mΩ(Typ.)@VGS=10V RDS (ON) =5.5mΩ(Typ.)@VGS=10V
• Super High Dense Ce.
RU30105L - N-Channel Advanced Power MOSFET
(Ruichips)
RU30105L
N-Channel Advanced Power MOSFET
MOSFET
Features
• 30V/110A, RDS (ON) =3.2 mΩ(Typ.)@VGS=10V
• Super High Dense Cell Design
• Ultra Low On-Res.