RU30E20H Datasheet - Ruichips

RU30E20H - N-Channel Advanced Power MOSFET

D D D D G S S pin1 S SOP-8 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat .

RU30E20H Features

* 30V/20A, RDS (ON) =4.6mΩ(Typ.)@VGS=10V RDS (ON) =5.8mΩ(Typ.)@VGS=4.5V RDS (ON) =15mΩ(Typ.)@VGS=2.5V

* Low On-Resistance

* ESD Protected

* Super High Dense Cell Design

* Reliable and Rugged

* Lead Free and Green Devices Available (RoHS Compliant) Appl

RU30E20H-Ruichips.pdf