RU30E20H Datasheet, Mosfet, Ruichips

RU30E20H Features

• Mosfet
• 30V/20A, RDS (ON) =4.6mΩ(Typ.)@VGS=10V RDS (ON) =5.8mΩ(Typ.)@VGS=4.5V RDS (ON) =15mΩ(Typ.)@VGS=2.5V
• Low On-Resistance
• ESD Protected
• Super High De

PDF File Details

Part number:

RU30E20H

Manufacturer:

Ruichips

File Size:

403.67kb

Download:

📄 Datasheet

Description:

N-channel advanced power mosfet. D D D D G S S pin1 S SOP-8 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VG

RU30E20H Application

• Applications
• Switching Application Systems Pin Description D D D D G S S pin1 S SOP-8 D G Absolute Maximum Ratings Symbol Parameter C

TAGS

RU30E20H

Ruichips

📁 Related Datasheet

RU30E30L - N-Channel Advanced Power MOSFET (Ruichips)
RU30E30L N-Channel Advanced Power MOSFET MOSFET Features • 30V/30A, RDS (ON) =16mΩ(tpy.)@VGS=10V RDS (ON) =26mΩ(tpy.)@VGS=4.5V • Super High Dense Cel.

RU30E40L - N-Channel Advanced Power MOSFET (Ruichips)
RU30E40L N-Channel Advanced Power MOSFET MOSFET Features • 30V/60A, RDS (ON) =5mΩ(Typ.)@VGS=10V RDS (ON) =10mΩ(Typ.)@VGS=4.5V • Super High Dense Cell.

RU30E4B - N-Channel MOSFET (VBsemi)
RU30E4B-VB RU30E4B-VB Datasheet N-Channel 30-V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.030 at VGS = 10 V 30 0.033 at V.

RU30E4B - N-Channel Advanced Power MOSFET (Ruichips)
RU30E4B N-Channel Advanced Power MOSFET Features • 30V/4A, RDS (ON) =30mΩ(Typ.)@VGS=10V RDS (ON) =55mΩ(Typ.)@VGS=4.5V • Super High Dense Cell Design .

RU30E60M2 - N-Channel Advanced Power MOSFET (Ruichips)
RU30E60M2 N-Channel Advanced Power MOSFET Features • 30V/60A, RDS (ON) =3mΩ(Typ.)@VGS=10V RDS (ON) =6mΩ(Typ.)@VGS=4.5V • Super High Dense Cell Design.

RU30E7H - N-Channel Advanced Power MOSFET (Ruichips)
RU30E7H N-Channel Advanced Power MOSFET MOSFET Features • 30V/7.8A, RDS (ON) =16mΩ (Typ.) @ VGS=10V RDS (ON) =25mΩ (Typ.) @ VGS=4.5V • Super High Den.

RU30 - Fast-Recovery Rectifier Diodes (Sanken electric)
.

RU30100L - N-Channel Advanced Power MOSFET (Ruichips)
RU30100L N-Channel Advanced Power MOSFET MOSFET Features • 30V/100A, RDS (ON) =2.2 mΩ(Typ.)@VGS=10V RDS (ON) =4 mΩ(Typ.)@VGS=4.5V • Super High Dense .

RU30100R - N-Channel Advanced Power MOSFET (Ruichips)
RU30100R N-Channel Advanced Power MOSFET MOSFET Features • 30V/110A, RDS (ON) =4 mΩ(Typ.)@VGS=10V RDS (ON) =5.5mΩ(Typ.)@VGS=10V • Super High Dense Ce.

RU30105L - N-Channel Advanced Power MOSFET (Ruichips)
RU30105L N-Channel Advanced Power MOSFET MOSFET Features • 30V/110A, RDS (ON) =3.2 mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Res.