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RU30E20H Datasheet - Ruichips

RU30E20H N-Channel Advanced Power MOSFET

D D D D G S S pin1 S SOP-8 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat .

RU30E20H Features

* 30V/20A, RDS (ON) =4.6mΩ(Typ.)@VGS=10V RDS (ON) =5.8mΩ(Typ.)@VGS=4.5V RDS (ON) =15mΩ(Typ.)@VGS=2.5V

* Low On-Resistance

* ESD Protected

* Super High Dense Cell Design

* Reliable and Rugged

* Lead Free and Green Devices Available (RoHS Compliant) Appl

RU30E20H-Ruichips.pdf

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Datasheet Details

Part number:

RU30E20H

Manufacturer:

Ruichips

File Size:

403.67 KB

Description:

N-channel advanced power mosfet.

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RU30E20H RU30E20H N-Channel Advanced Power MOSFET Ruichips

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