Datasheet4U Logo Datasheet4U.com

RU30E20H N-Channel Advanced Power MOSFET

RU30E20H Description

RU30E20H N-Channel Advanced Power MOSFET .
D D D D G S S pin1 S SOP-8 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Dr.

RU30E20H Features

* 30V/20A, RDS (ON) =4.6mΩ(Typ. )@VGS=10V RDS (ON) =5.8mΩ(Typ. )@VGS=4.5V RDS (ON) =15mΩ(Typ. )@VGS=2.5V
* Low On-Resistance
* ESD Protected
* Super High Dense Cell Design
* Reliable and Rugged
* Lead Free and Green Devices Available (RoHS Compliant) Appl

📥 Download Datasheet

Preview of RU30E20H PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
RU30E20H
Manufacturer
Ruichips
File Size
403.67 KB
Datasheet
RU30E20H-Ruichips.pdf
Description
N-Channel Advanced Power MOSFET

📁 Related Datasheet

  • RU30E4B - N-Channel MOSFET (VBsemi)
  • RU30 - Fast-Recovery Rectifier Diodes (Sanken electric)
  • RU3060L - N-Channel MOSFET (VBsemi)
  • RU30A - Fast-Recovery Rectifier Diodes (Sanken electric)
  • RU30Z - Fast-Recovery Rectifier Diodes (Sanken electric)
  • RU3 - Fast-Recovery Rectifier Diodes (Sanken electric)
  • RU31 - Fast-Recovery Rectifier Diodes (Sanken electric)
  • RU31A - Fast-Recovery Rectifier Diodes (Sanken electric)

📌 All Tags

N-Channel Advanced Power MOSFET Ruichips
Ruichips RU30E20H-like datasheet