RU30100R - N-Channel Advanced Power MOSFET
TO-220 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on La
RU30100R Features
* 30V/110A, RDS (ON) =4 mΩ(Typ.)@VGS=10V RDS (ON) =5.5mΩ(Typ.)@VGS=10V
* Super High Dense Cell Design
* Ultra Low On-Resistance
* 100% avalanche tested
* Lead Free and Green Devices Available (RoHS Compliant) Applications
* DC-DC Converters and Off-lin
