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RU30100R

N-Channel Advanced Power MOSFET

RU30100R Features

* 30V/110A, RDS (ON) =4 mΩ(Typ.)@VGS=10V RDS (ON) =5.5mΩ(Typ.)@VGS=10V

* Super High Dense Cell Design

* Ultra Low On-Resistance

* 100% avalanche tested

* Lead Free and Green Devices Available (RoHS Compliant) Applications

* DC-DC Converters and Off-lin

RU30100R General Description

TO-220 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on La.

RU30100R Datasheet (302.87 KB)

Preview of RU30100R PDF

Datasheet Details

Part number:

RU30100R

Manufacturer:

Ruichips

File Size:

302.87 KB

Description:

N-channel advanced power mosfet.

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RU30120M N-Channel Advanced Power MOSFET Features • 30V/120A, RDS (ON) =2mΩ(Typ.)@VGS=10V RDS (ON) =2.9mΩ(Typ.)@VGS=4.5V • Super High Dense Cell Desi.

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RU30120R N-Channel Advanced Power MOSFET MOSFET Features • 30V/120A, RDS (ON) =2.5mΩ (Typ.) @ VGS=10V RDS (ON) =3.3mΩ (Typ.) @ VGS=4.5V • Super High .

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RU30100R N-Channel Advanced Power MOSFET Ruichips

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