RU30100R Datasheet - Ruichips

RU30100R N-Channel Advanced Power MOSFET

TO-220 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on La.

RU30100R Features

* 30V/110A, RDS (ON) =4 mΩ(Typ.)@VGS=10V RDS (ON) =5.5mΩ(Typ.)@VGS=10V

* Super High Dense Cell Design

* Ultra Low On-Resistance

* 100% avalanche tested

* Lead Free and Green Devices Available (RoHS Compliant) Applications

* DC-DC Converters and Off-lin

RU30100R-Ruichips.pdf