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RU30120L

N-Channel Advanced Power MOSFET

RU30120L Features

* 30V/120A, RDS (ON) =2.5mΩ (Typ.) @ VGS=10V RDS (ON) =3.3mΩ (Typ.) @ VGS=4.5V

* Super High Dense Cell Design

* Ultra Low On-Resistance

* 100% avalanche tested

* Lead Free and Green Devices Available (RoHS Compliant) Applications

* DC-DC Converters Pi

RU30120L General Description

TO252 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Lar.

RU30120L Datasheet (273.90 KB)

Preview of RU30120L PDF

Datasheet Details

Part number:

RU30120L

Manufacturer:

Ruichips

File Size:

273.90 KB

Description:

N-channel advanced power mosfet.

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RU30106L N-Channel Advanced Power MOSFET MOSFET Features • 30V/130A, RDS (ON) =2.5mΩ(Typ.)@VGS=10V RDS (ON) =5mΩ(Typ.)@VGS=4.5V • Super High Dense Ce.

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RU30120L N-Channel Advanced Power MOSFET Ruichips

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