RU30120L - N-Channel Advanced Power MOSFET
TO252 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Lar
RU30120L Features
* 30V/120A, RDS (ON) =2.5mΩ (Typ.) @ VGS=10V RDS (ON) =3.3mΩ (Typ.) @ VGS=4.5V
* Super High Dense Cell Design
* Ultra Low On-Resistance
* 100% avalanche tested
* Lead Free and Green Devices Available (RoHS Compliant) Applications
* DC-DC Converters Pi
