RU30120S - N-Channel Advanced Power MOSFET
D G S TO263 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① I
RU30120S Features
* 30V/120A, RDS (ON) =2.5mΩ(Typ.)@VGS=10V RDS (ON) =3.3mΩ(Typ.)@VGS=4.5V
* Super High Dense Cell Design
* Ultra Low On-Resistance
* 100% Avalanche Tested
* Lead Free and Green Devices Available (RoHS Compliant) Applications
* DC-DC Converters Pin Desc
