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RU30120S N-Channel Advanced Power MOSFET

RU30120S Description

RU30120S N-Channel Advanced Power MOSFET .
D G S TO263 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-.

RU30120S Features

* 30V/120A, RDS (ON) =2.5mΩ(Typ. )@VGS=10V RDS (ON) =3.3mΩ(Typ. )@VGS=4.5V
* Super High Dense Cell Design
* Ultra Low On-Resistance
* 100% Avalanche Tested

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Datasheet Details

Part number
RU30120S
Manufacturer
Ruichips
File Size
302.41 KB
Datasheet
RU30120S-Ruichips.pdf
Description
N-Channel Advanced Power MOSFET

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N-Channel Advanced Power MOSFET Ruichips
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