RU30120S Datasheet - Ruichips

RU30120S N-Channel Advanced Power MOSFET

D G S TO263 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① I.

RU30120S Features

* 30V/120A, RDS (ON) =2.5mΩ(Typ.)@VGS=10V RDS (ON) =3.3mΩ(Typ.)@VGS=4.5V

* Super High Dense Cell Design

* Ultra Low On-Resistance

* 100% Avalanche Tested

* Lead Free and Green Devices Available (RoHS Compliant) Applications

* DC-DC Converters Pin Desc

RU30120S-Ruichips.pdf