RU30120M - N-Channel Advanced Power MOSFET

Ruichips

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Datasheet Details

Part number	RU30120M
Manufacturer	Ruichips
File Size	302.05 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU30120M-Ruichips.pdf

RU30120M Product details

Description

PDFN5060 Applications DC/DC Conversion Switching Application Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation Copyright Ruichips Semiconductor

Features

30V/120A, RDS (ON) =2mΩ(Typ. )@VGS=10V RDS (ON) =2.9mΩ(Typ. )@VGS=4.5V.
Super High Dense Cell Design.
Reliable and Rugged.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant) Pin.

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Published: Apr 10, 2017 |