Datasheet4U Logo Datasheet4U.com

RU30120M N-Channel Advanced Power MOSFET

RU30120M Description

RU30120M N-Channel Advanced Power MOSFET .
PDFN5060 Applications. DC/DC Conversion. Switching Application Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°.

RU30120M Features

* 30V/120A, RDS (ON) =2mΩ(Typ. )@VGS=10V RDS (ON) =2.9mΩ(Typ. )@VGS=4.5V
* Super High Dense Cell Design
* Reliable and Rugged
* 100% avalanche tested

RU30120M Applications

* DC/DC Conversion
* Switching Application Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forwa

📥 Download Datasheet

Preview of RU30120M PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
RU30120M
Manufacturer
Ruichips
File Size
302.05 KB
Datasheet
RU30120M-Ruichips.pdf
Description
N-Channel Advanced Power MOSFET

📁 Related Datasheet

  • RU30 - Fast-Recovery Rectifier Diodes (Sanken electric)
  • RU3060L - N-Channel MOSFET (VBsemi)
  • RU30A - Fast-Recovery Rectifier Diodes (Sanken electric)
  • RU30E4B - N-Channel MOSFET (VBsemi)
  • RU30Z - Fast-Recovery Rectifier Diodes (Sanken electric)
  • RU3 - Fast-Recovery Rectifier Diodes (Sanken electric)
  • RU31 - Fast-Recovery Rectifier Diodes (Sanken electric)
  • RU31A - Fast-Recovery Rectifier Diodes (Sanken electric)

📌 All Tags

N-Channel Advanced Power MOSFET Ruichips
Ruichips RU30120M-like datasheet