RU3060L
VBsemi
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N-channel mosfet.
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RU3060L - N-Channel Advanced Power MOSFET
(Ruichips)
RU3060L
N-Channel Advanced Power MOSFET
MOSFET
Features
• 30V/53A, RDS (ON) =9mΩ(tpy.)@VGS=10V RDS (ON) =13mΩ(tpy.)@VGS=4.5V
• Super High Dense Cell .
RU3065L - N-Channel Advanced Power MOSFET
(Ruichips)
RU3065L
N-Channel Advanced Power MOSFET
MOSFET
Features
• 30V/65A, RDS (ON) =4mΩ (Typ.)@VGS=10V RDS (ON) =6mΩ (Typ.)@VGS=4.5V
• Super High Dense Cell.
RU306C - N-Channel Advanced Power MOSFET
(Ruichips)
RU306C
N-Channel Advanced Power MOSFET
Features
• 30V/5A, RDS (ON) =30m (Typ.) @ VGS=10V RDS (ON) =38m (Typ.) @ VGS=4.5V RDS (ON) =110m (Typ.) @ V.
RU30 - Fast-Recovery Rectifier Diodes
(Sanken electric)
.
RU30100L - N-Channel Advanced Power MOSFET
(Ruichips)
RU30100L
N-Channel Advanced Power MOSFET
MOSFET
Features
• 30V/100A, RDS (ON) =2.2 mΩ(Typ.)@VGS=10V RDS (ON) =4 mΩ(Typ.)@VGS=4.5V
• Super High Dense .
RU30100R - N-Channel Advanced Power MOSFET
(Ruichips)
RU30100R
N-Channel Advanced Power MOSFET
MOSFET
Features
• 30V/110A, RDS (ON) =4 mΩ(Typ.)@VGS=10V RDS (ON) =5.5mΩ(Typ.)@VGS=10V
• Super High Dense Ce.
RU30105L - N-Channel Advanced Power MOSFET
(Ruichips)
RU30105L
N-Channel Advanced Power MOSFET
MOSFET
Features
• 30V/110A, RDS (ON) =3.2 mΩ(Typ.)@VGS=10V
• Super High Dense Cell Design
• Ultra Low On-Res.
RU30105R - N-Channel Advanced Power MOSFET
(Ruichips)
RU30105R
N-Channel Advanced Power MOSFET
MOSFET
Features
• 30V/125A, RDS (ON) =3.2 mΩ(Typ.)@VGS=10V
• Super High Dense Cell Design
• Ultra Low On-Res.
RU30106L - N-Channel Advanced Power MOSFET
(Ruichips)
RU30106L
N-Channel Advanced Power MOSFET
MOSFET
Features
• 30V/130A, RDS (ON) =2.5mΩ(Typ.)@VGS=10V RDS (ON) =5mΩ(Typ.)@VGS=4.5V
• Super High Dense Ce.
RU3010H - N-Channel Advanced Power MOSFET
(Ruichips)
RU3010H
N-Channel Advanced Power MOSFET
MOSFET
Features
• 30V/8A, RDS (ON) =18mΩ (Typ.) @ VGS=10V RDS (ON) =40mΩ (Typ.) @ VGS=4.5V
• Super High Dense.