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RU3060L - N-Channel MOSFET

RU3060L Description

RU3060L-VB RU3060L-VB Datasheet www.VBsemi.com N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.007 at VGS = 10 V 0.009 at V.

RU3060L Features

* TrenchFET® Power MOSFET
* 100 % Rg and UIS Tested

RU3060L Applications

* OR-ing
* Server
* DC/DC G GDS Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 175 °C) TC = 70 °C TA = 25 °C

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Datasheet Details

Part number
RU3060L
Manufacturer
VBsemi
File Size
223.21 KB
Datasheet
RU3060L-VBsemi.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET VBsemi
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