RU3060L Datasheet, MOSFET, VBsemi

RU3060L Features

  • Mosfet
  • TrenchFET® Power MOSFET
  • 100 % Rg and UIS Tested
  • Compliant to RoHS Directive 2011/65/EU APPLICATIONS
  • OR-ing
  • Server
  • DC/DC G G

PDF File Details

Part number:

RU3060L

Manufacturer:

VBsemi

File Size:

223.21kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

Datasheet Preview: RU3060L 📥 Download PDF (223.21kb)
Page 2 of RU3060L Page 3 of RU3060L

RU3060L Application

  • Applications
  • OR-ing
  • Server
  • DC/DC G GDS Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless

TAGS

RU3060L
N-Channel
MOSFET
VBsemi

📁 Related Datasheet

RU3060L - N-Channel Advanced Power MOSFET (Ruichips)
RU3060L N-Channel Advanced Power MOSFET MOSFET Features • 30V/53A, RDS (ON) =9mΩ(tpy.)@VGS=10V RDS (ON) =13mΩ(tpy.)@VGS=4.5V • Super High Dense Cell .

RU3065L - N-Channel Advanced Power MOSFET (Ruichips)
RU3065L N-Channel Advanced Power MOSFET MOSFET Features • 30V/65A, RDS (ON) =4mΩ (Typ.)@VGS=10V RDS (ON) =6mΩ (Typ.)@VGS=4.5V • Super High Dense Cell.

RU306C - N-Channel Advanced Power MOSFET (Ruichips)
RU306C N-Channel Advanced Power MOSFET Features • 30V/5A, RDS (ON) =30m (Typ.) @ VGS=10V RDS (ON) =38m (Typ.) @ VGS=4.5V RDS (ON) =110m (Typ.) @ V.

RU30 - Fast-Recovery Rectifier Diodes (Sanken electric)
.

RU30100L - N-Channel Advanced Power MOSFET (Ruichips)
RU30100L N-Channel Advanced Power MOSFET MOSFET Features • 30V/100A, RDS (ON) =2.2 mΩ(Typ.)@VGS=10V RDS (ON) =4 mΩ(Typ.)@VGS=4.5V • Super High Dense .

RU30100R - N-Channel Advanced Power MOSFET (Ruichips)
RU30100R N-Channel Advanced Power MOSFET MOSFET Features • 30V/110A, RDS (ON) =4 mΩ(Typ.)@VGS=10V RDS (ON) =5.5mΩ(Typ.)@VGS=10V • Super High Dense Ce.

RU30105L - N-Channel Advanced Power MOSFET (Ruichips)
RU30105L N-Channel Advanced Power MOSFET MOSFET Features • 30V/110A, RDS (ON) =3.2 mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Res.

RU30105R - N-Channel Advanced Power MOSFET (Ruichips)
RU30105R N-Channel Advanced Power MOSFET MOSFET Features • 30V/125A, RDS (ON) =3.2 mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Res.

RU30106L - N-Channel Advanced Power MOSFET (Ruichips)
RU30106L N-Channel Advanced Power MOSFET MOSFET Features • 30V/130A, RDS (ON) =2.5mΩ(Typ.)@VGS=10V RDS (ON) =5mΩ(Typ.)@VGS=4.5V • Super High Dense Ce.

RU3010H - N-Channel Advanced Power MOSFET (Ruichips)
RU3010H N-Channel Advanced Power MOSFET MOSFET Features • 30V/8A, RDS (ON) =18mΩ (Typ.) @ VGS=10V RDS (ON) =40mΩ (Typ.) @ VGS=4.5V • Super High Dense.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts