RU306C Datasheet (Ruichips) - N-Channel Advanced Power MOSFET

RU306C, N-Channel Advanced Power MOSFET

SOT23-3 Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TA=25°C Mounted on L

RU306C Features

* 30V/5A, RDS (ON) =30m (Typ.) @ VGS=10V RDS (ON) =38m (Typ.) @ VGS=4.5V RDS (ON) =110m (Typ.) @ VGS=2.5V

* Low RDS (ON)

* Super High Dense Cell Design

* Reliable and Rugged

* Lead Free and Green Available Applications

* DC/DC Converter

* Lo