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RU3065L

N-Channel Advanced Power MOSFET

RU3065L Features

* 30V/65A, RDS (ON) =4mΩ (Typ.)@VGS=10V RDS (ON) =6mΩ (Typ.)@VGS=4.5V

* Super High Dense Cell Design

* Ultra Low On-Resistance

* 100% avalanche tested

* Lead Free and Green Devices Available (RoHS Compliant) Applications

* Switching Application Systems

RU3065L General Description

TO-252 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on La.

RU3065L Datasheet (289.21 KB)

Preview of RU3065L PDF

Datasheet Details

Part number:

RU3065L

Manufacturer:

Ruichips

File Size:

289.21 KB

Description:

N-channel advanced power mosfet.

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RU3065L N-Channel Advanced Power MOSFET Ruichips

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