RU3065L Datasheet - Ruichips

RU3065L N-Channel Advanced Power MOSFET

TO-252 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on La.

RU3065L Features

* 30V/65A, RDS (ON) =4mΩ (Typ.)@VGS=10V RDS (ON) =6mΩ (Typ.)@VGS=4.5V

* Super High Dense Cell Design

* Ultra Low On-Resistance

* 100% avalanche tested

* Lead Free and Green Devices Available (RoHS Compliant) Applications

* Switching Application Systems

RU3065L-Ruichips.pdf