Datasheet4U Logo Datasheet4U.com

RU30E30L - N-Channel Advanced Power MOSFET

RU30E30L Description

RU30E30L N-Channel Advanced Power MOSFET MOSFET .
TO252 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS.

RU30E30L Features

* 30V/30A, RDS (ON) =16mΩ(tpy. )@VGS=10V RDS (ON) =26mΩ(tpy. )@VGS=4.5V
* Super High Dense Cell Design
* ESD protected
* Reliable and Rugged
* 100% avalanche tested

RU30E30L Applications

* DC/DC Converter

📥 Download Datasheet

Preview of RU30E30L PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
RU30E30L
Manufacturer
Ruichips
File Size
271.83 KB
Datasheet
RU30E30L-Ruichips.pdf
Description
N-Channel Advanced Power MOSFET

📁 Related Datasheet

  • RU30E4B - N-Channel MOSFET (VBsemi)
  • RU30 - Fast-Recovery Rectifier Diodes (Sanken electric)
  • RU3060L - N-Channel MOSFET (VBsemi)
  • RU30A - Fast-Recovery Rectifier Diodes (Sanken electric)
  • RU30Z - Fast-Recovery Rectifier Diodes (Sanken electric)
  • RU3 - Fast-Recovery Rectifier Diodes (Sanken electric)
  • RU31 - Fast-Recovery Rectifier Diodes (Sanken electric)
  • RU31A - Fast-Recovery Rectifier Diodes (Sanken electric)

📌 All Tags

N-Channel Advanced Power MOSFET Ruichips
Ruichips RU30E30L-like datasheet