RU30E30L Datasheet - Ruichips

RU30E30L N-Channel Advanced Power MOSFET

TO252 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Si.

RU30E30L Features

* 30V/30A, RDS (ON) =16mΩ(tpy.)@VGS=10V RDS (ON) =26mΩ(tpy.)@VGS=4.5V

* Super High Dense Cell Design

* ESD protected

* Reliable and Rugged

* 100% avalanche tested

* Lead Free and Green Devices Available (RoHS Compliant) Applications

* DC/DC Con

RU30E30L Datasheet (271.83 KB)

RU30E30L Datasheet Preview — Preview of RU30E30L PDF

Datasheet Details

Part number:

RU30E30L

Manufacturer:

Ruichips

File Size:

271.83 KB

Description:

N-channel advanced power mosfet.

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RU30E30L N-Channel Advanced Power MOSFET Ruichips

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