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RU30E30L

N-Channel Advanced Power MOSFET

RU30E30L Features

* 30V/30A, RDS (ON) =16mΩ(tpy.)@VGS=10V RDS (ON) =26mΩ(tpy.)@VGS=4.5V

* Super High Dense Cell Design

* ESD protected

* Reliable and Rugged

* 100% avalanche tested

* Lead Free and Green Devices Available (RoHS Compliant) Applications

* DC/DC Con

RU30E30L General Description

TO252 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Si.

RU30E30L Datasheet (271.83 KB)

Preview of RU30E30L PDF

Datasheet Details

Part number:

RU30E30L

Manufacturer:

Ruichips

File Size:

271.83 KB

Description:

N-channel advanced power mosfet.

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RU30E30L N-Channel Advanced Power MOSFET Ruichips

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