RU30E60M2 Datasheet - Ruichips

RU30E60M2 - N-Channel Advanced Power MOSFET

D D DD SSS G PIN1 PDFN3333 D PIN1 G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted .

RU30E60M2 Features

* 30V/60A, RDS (ON) =3mΩ(Typ.)@VGS=10V RDS (ON) =6mΩ(Typ.)@VGS=4.5V

* Super High Dense Cell Design

* Ulta Low On-Resistance

* ESD Protected(Rating 4KV HBM)

* Fast Switching Speed

* 100% avalanche tested

* Lead Free and Green Devices Available (

RU30E60M2-Ruichips.pdf