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RU30E60M2 - N-Channel Advanced Power MOSFET

RU30E60M2 Description

RU30E60M2 N-Channel Advanced Power MOSFET .
D D DD SSS G PIN1 PDFN3333 D PIN1 G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Sour.

RU30E60M2 Features

* 30V/60A, RDS (ON) =3mΩ(Typ. )@VGS=10V RDS (ON) =6mΩ(Typ. )@VGS=4.5V
* Super High Dense Cell Design
* Ulta Low On-Resistance
* ESD Protected(Rating 4KV HBM)
* Fast Switching Speed
* 100% avalanche tested
* Lead Free and Green Devices Available (

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Datasheet Details

Part number
RU30E60M2
Manufacturer
Ruichips
File Size
314.77 KB
Datasheet
RU30E60M2-Ruichips.pdf
Description
N-Channel Advanced Power MOSFET

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N-Channel Advanced Power MOSFET Ruichips
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