RU30E40L Datasheet - Ruichips

RU30E40L N-Channel Advanced Power MOSFET

TO252 Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Lar.

RU30E40L Features

* 30V/60A, RDS (ON) =5mΩ(Typ.)@VGS=10V RDS (ON) =10mΩ(Typ.)@VGS=4.5V

* Super High Dense Cell Design

* ESD protected

* Reliable and Rugged

* 100% avalanche tested

* Lead Free and Green Devices Available (RoHS Compliant) Applications

* Power Mana

RU30E40L-Ruichips.pdf

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Datasheet Details

Part number:

RU30E40L

Manufacturer:

Ruichips

File Size:

289.85 KB

Description:

N-channel advanced power mosfet.

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RU30E40L RU30E40L N-Channel Advanced Power MOSFET Ruichips

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