RU30S15H Datasheet (Ruichips) - P-Channel Advanced Power MOSFET

RU30S15H, P-Channel Advanced Power MOSFET

D2 D2 D1 D1 G2 S2 G1 pin1 S1 SOP-8 Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large H

RU30S15H Features

* -30V/-15A, RDS (ON) =15mΩ(Typ.)@VGS=-10V RDS (ON) =22mΩ(Typ.)@VGS=-4.5V

* Low On-Resistance

* Super High Dense Cell Design

* Reliable and Rugged

* Lead Free and Green Devices Available (RoHS Compliant) Applications

* Power management

* Load swi