FGAF30S65AQ (ON Semiconductor)
IGBT
Field Stop Trench IGBT, 30 A, 650 V
FGAF30S65AQ
Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4th generation o
(32 views)
30S6 (Microsemi Corporation)
3 AMP MEDIUM POWER SILICON RECTIFIER DIODES
(30 views)
MCM94CT430S70 (Motorola Semiconductor)
(MCM94C430S60 / MCM94C430S70) 4M x 9 DRAM
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(30 views)
MCM94CT430S60 (Motorola Semiconductor)
(MCM94C430S60 / MCM94C430S70) 4M x 9 DRAM
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(29 views)
AIDW30S65C5 (Infineon)
650V/30A Silicon Carbide Schottky Diode
AIDW30S65C5
CoolSiC™ Automotive Schottky Diode 650V G5
650V/30A Silicon Carbide Schottky Diode in TO247-3
Features
Revolutionary semiconductor mate
(28 views)
MGBR30S60C (UNISONIC TECHNOLOGIES)
DUAL MOS GATED BARRIER RECTIFIER
UNISONIC TECHNOLOGIES CO., LTD MGBR30S60C
Preliminary DIODE
DUAL MOS GATED BARRIER RECTIFIER
DESCRIPTION
The UTC MGBR30S60C is a dual mos g ated b
(27 views)
SL30S60F (Slkor)
FAST RECOVER DIODE
FAST RECOVER DIODE
Features
600V,30A Soft Recovery Operation Temperature ＜175℃ Planar Construction
Applications
Freewheeling,Snubber,Clamp
(26 views)
FFH30S60S (ON Semiconductor)
Rectifier
Stealth II Rectifier 30 A, 600 V
FFH30S60S
Description The FFH30S60S is stealth2 rectifier with soft recovery
characteristics. It is silicon nitride
(26 views)
MCM94C430S60 (Motorola Semiconductor)
(MCM94C430S60 / MCM94C430S70) 4M x 9 DRAM
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(24 views)
MCM94C430S70 (Motorola Semiconductor)
(MCM94C430S60 / MCM94C430S70) 4M x 9 DRAM
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(24 views)
CF30S60CT (CITC)
30A High Power Trench Schottky Barrier Rectifier
Chip Integration Technology Corporation
CF30S60CT
30A High Power Trench Schottky Barrier Rectifier
Main Product Characteristics
■ Outline
IF(AV) V
(23 views)
FFH30S60S (Fairchild Semiconductor)
Stealth 2 Rectifier
FFH30S60S
September 2007
FFH30S60S
Stealth 2 Rectifier
Features
• High Speed Switching, trr < 40ns @ IF = 30A • High Reverse Voltage and High Reliab
(23 views)
S30S60 (MOSPEC)
Schottky Barrier Rectifiers
MOSPEC
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epit
(22 views)
SPE30S60F-D (JILIN SINO)
IPM
(IPM) Intelligent Power Module
SPE30S60F-D
MAIN CHARACTERISTICS
600V/20A VCES ± IC ± ICP
600V 30A 60A
Package
● ● ● ●
APPLICATIONS
● Ai
(21 views)
RM4P30S6 (Rectron)
P-Ch 30V Fast Switching MOSFET
RM4P30S6
P -Ch 30V Fast Switching MOSFETs
Description
The RM4P30S6 is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON and
(20 views)
CSF30S60CT-A (CITC)
30A MOS Schottky Rectifier
Chip Integration Technology Corporation
CSF30S60CT-A
30A MOS Schottky Rectifier
Main Product Characteristics
IF(AV) VRWM
TJ VF(Typ)
2 X 15A 60V
15
(19 views)
CS30S60CT-A (CITC)
Super Low Barrier High Voltage Power Rectifier
Chip Integration Technology Corporation
CS30S60CT-A
Super Low Barrier High Voltage Power Rectifier
Main Product Characteristics
IF(AV) VRRM TJ V(Ty
(11 views)
