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30S6 Datasheet, Features, Application

30S6 3 AMP MEDIUM POWER SILICON RECTIFIER DIODES

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JILIN SINO

SPE30S60F-D - IPM

(IPM) Intelligent Power Module SPE30S60F-D MAIN CHARACTERISTICS 600V/20A VCES ± IC ± ICP 600V 30A 60A Package ● ● ● ● APPLICATIONS ● Ai.
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UNISONIC TECHNOLOGIES

MGBR30S60C - DUAL MOS GATED BARRIER RECTIFIER

UNISONIC TECHNOLOGIES CO., LTD MGBR30S60C Preliminary DIODE DUAL MOS GATED BARRIER RECTIFIER „ DESCRIPTION The UTC MGBR30S60C is a dual mos g ated b.
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Microsemi Corporation

30S6 - 3 AMP MEDIUM POWER SILICON RECTIFIER DIODES

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CITC

CF30S60CT - 30A High Power Trench Schottky Barrier Rectifier

Chip Integration Technology Corporation CF30S60CT 30A High Power Trench Schottky Barrier Rectifier Main Product Characteristics ■ Outline IF(AV) V.
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CITC

CSF30S60CT-A - 30A MOS Schottky Rectifier

Chip Integration Technology Corporation CSF30S60CT-A 30A MOS Schottky Rectifier Main Product Characteristics IF(AV) VRWM TJ VF(Typ) 2 X 15A 60V 15.
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CITC

CS30S60CT-A - Super Low Barrier High Voltage Power Rectifier

Chip Integration Technology Corporation CS30S60CT-A Super Low Barrier High Voltage Power Rectifier Main Product Characteristics IF(AV) VRRM TJ V(Ty.
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Motorola Semiconductor

MCM94C430S60 - (MCM94C430S60 / MCM94C430S70) 4M x 9 DRAM

www.DataSheet4U.com DataSheet4U.com e DataShe DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com et4U.com DataSheet4U.com .
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Motorola Semiconductor

MCM94C430S70 - (MCM94C430S60 / MCM94C430S70) 4M x 9 DRAM

www.DataSheet4U.com DataSheet4U.com e DataShe DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com et4U.com DataSheet4U.com .
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Motorola Semiconductor

MCM94CT430S60 - (MCM94C430S60 / MCM94C430S70) 4M x 9 DRAM

www.DataSheet4U.com DataSheet4U.com e DataShe DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com et4U.com DataSheet4U.com .
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Motorola Semiconductor

MCM94CT430S70 - (MCM94C430S60 / MCM94C430S70) 4M x 9 DRAM

www.DataSheet4U.com DataSheet4U.com e DataShe DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com et4U.com DataSheet4U.com .
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Fairchild Semiconductor

FFH30S60S - Stealth 2 Rectifier

FFH30S60S September 2007 FFH30S60S Stealth 2 Rectifier Features • High Speed Switching, trr < 40ns @ IF = 30A • High Reverse Voltage and High Reliab.
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Slkor

SL30S60F - FAST RECOVER DIODE

FAST RECOVER DIODE Features  600V,30A  Soft Recovery  Operation Temperature <175℃  Planar Construction Applications  Freewheeling,Snubber,Clamp .
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ON Semiconductor

FGAF30S65AQ - IGBT

Field Stop Trench IGBT, 30 A, 650 V FGAF30S65AQ Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4th generation o.
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ON Semiconductor

FFH30S60S - Rectifier

Stealth II Rectifier 30 A, 600 V FFH30S60S Description The FFH30S60S is stealth2 rectifier with soft recovery characteristics. It is silicon nitride.
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Infineon

AIDW30S65C5 - 650V/30A Silicon Carbide Schottky Diode

AIDW30S65C5 CoolSiC™ Automotive Schottky Diode 650V G5 650V/30A Silicon Carbide Schottky Diode in TO247-3 Features  Revolutionary semiconductor mate.
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MOSPEC

S30S60 - Schottky Barrier Rectifiers

MOSPEC Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epit.
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Rectron

RM4P30S6 - P-Ch 30V Fast Switching MOSFET

RM4P30S6 P -Ch 30V Fast Switching MOSFETs Description The RM4P30S6 is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON and.
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