30S6 Datasheet | Specifications & PDF Download

(IPM) Intelligent Power Module SPE30S60F-D MAIN CHARACTERISTICS 600V/20A VCES ± IC ± ICP 600V 30A 60A Package ● ● ● ● APPLICATIONS ● Ai

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RM4P30S6 P -Ch 30V Fast Switching MOSFETs Description The RM4P30S6 is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON and

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Field Stop Trench IGBT, 30 A, 650 V FGAF30S65AQ Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4th generation o

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Chip Integration Technology Corporation CF30S60CT 30A High Power Trench Schottky Barrier Rectifier Main Product Characteristics ■ Outline IF(AV) V

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MOSPEC Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epit

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Stealth II Rectifier 30 A, 600 V FFH30S60S Description The FFH30S60S is stealth2 rectifier with soft recovery characteristics. It is silicon nitride

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Chip Integration Technology Corporation CSF30S60CT-A 30A MOS Schottky Rectifier Main Product Characteristics IF(AV) VRWM TJ VF(Typ) 2 X 15A 60V 15

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Chip Integration Technology Corporation CS30S60CT-A Super Low Barrier High Voltage Power Rectifier Main Product Characteristics IF(AV) VRRM TJ V(Ty

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AIDW30S65C5 CoolSiC™ Automotive Schottky Diode 650V G5 650V/30A Silicon Carbide Schottky Diode in TO247-3 Features  Revolutionary semiconductor mate

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FFH30S60S September 2007 FFH30S60S Stealth 2 Rectifier Features • High Speed Switching, trr < 40ns @ IF = 30A • High Reverse Voltage and High Reliab

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UNISONIC TECHNOLOGIES CO., LTD MGBR30S60C Preliminary DIODE DUAL MOS GATED BARRIER RECTIFIER „ DESCRIPTION The UTC MGBR30S60C is a dual mos g ated b

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FAST RECOVER DIODE Features  600V,30A  Soft Recovery  Operation Temperature ＜175℃  Planar Construction Applications  Freewheeling,Snubber,Clamp 

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