FGAF30S65AQ Datasheet - ON Semiconductor

FGAF30S65AQ IGBT

FGAF30S65AQ Features

* Maximum Junction Temperature: TJ = 175°C

* Positive Temperature Co

* efficient for Easy Parallel Operating

* High Current Capability

* Low Saturation Voltage: VCE(Sat) = 1.4 V (Typ.) @ IC = 30 A

* 100% of the Parts Tested for ILM (Note 1)

* Hig

Datasheet Details

FGAF30S65AQ

296.86 KB

Igbt.

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FGAF30S65AQ IGBT ON Semiconductor

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