* Maximum Junction Temperature: TJ = 175°C
* Positive Temperature Co
* efficient for Easy Parallel Operating
* High Current Capability
* Low Saturation Voltage: VCE(Sat) = 1.4 V (Typ.) @ IC = 30 A
* 100% of the Parts Tested for ILM (Note 1)
* Hig
FGAF30S65AQ Datasheet (296.86 KB)
FGAF30S65AQ
296.86 KB
Igbt.
Field Stop Trench IGBT, 30 A, 650 V
FGAF30S65AQ
Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4th generation o.
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