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FGAF30S65AQ IGBT

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Description

Field Stop Trench IGBT, 30 A, 650 V FGAF30S65AQ Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4th generation o.

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Features

* Maximum Junction Temperature: TJ = 175°C
* Positive Temperature Co
* efficient for Easy Parallel Operating
* High Current Capability
* Low Saturation Voltage: VCE(Sat) = 1.4 V (Typ. ) @ IC = 30 A
* 100% of the Parts Tested for ILM (Note 1)
* Hig

FGAF30S65AQ Distributors

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📌 All Tags

IGBT ON Semiconductor
ON Semiconductor FGAF30S65AQ-like datasheet