FGAF40S65AQ Datasheet - ON Semiconductor

FGAF40S65AQ IGBT

FGAF40S65AQ Features

* Maximum Junction Temperature: TJ = 175°C

* Positive Temperature Co

* efficient for Easy Parallel Operating

* High Current Capability

* Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 40 A

* 100% of the Parts Tested for ILM (Note 1)

* Hig

Datasheet Details

FGAF40S65AQ

486.38 KB

Igbt.

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FGAF40S65AQ IGBT ON Semiconductor

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