FGA25N120ANTDTU

NPT Trench IGBT

ON Semiconductor

FGA25N120ANTDTU Features

* NPT Trench Technology, Positive Temperature Coefficient

* Low Saturation Voltage: VCE(sat), typ = 2.0 V @ IC = 25 A and TC = 25°C

* Low Switching Loss: Eoff, typ = 0.96 mJ @ IC = 25 A and TC = 25°C

* Extremely Enhanced Avalanche Capability Applications

* Ind

FGA25N120ANTDTU General Description

Using ON Semiconductor's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the reso-nant or soft switching application such as inductio.

FGA25N120ANTDTU Datasheet (1.34 MB)