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FGA25N120ANTDTU, FGA25N120 Datasheet - ON Semiconductor

FGA25N120ANTDTU NPT Trench IGBT

Using ON Semiconductor's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the reso-nant or soft switching application such as inductio.

FGA25N120ANTDTU Features

* NPT Trench Technology, Positive Temperature Coefficient

* Low Saturation Voltage: VCE(sat), typ = 2.0 V @ IC = 25 A and TC = 25°C

* Low Switching Loss: Eoff, typ = 0.96 mJ @ IC = 25 A and TC = 25°C

* Extremely Enhanced Avalanche Capability Applications

* Ind

FGA25N120-ONSemiconductor.pdf

This datasheet PDF includes multiple part numbers: FGA25N120ANTDTU, FGA25N120. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

FGA25N120ANTDTU, FGA25N120

Manufacturer:

ON Semiconductor ↗

File Size:

1.34 MB

Description:

Npt trench igbt.

Note:

This datasheet PDF includes multiple part numbers: FGA25N120ANTDTU, FGA25N120.
Please refer to the document for exact specifications by model.

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TAGS

FGA25N120ANTDTU FGA25N120 NPT Trench IGBT ON Semiconductor

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