Using ON Semiconductor's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.
This device is well suited for the reso-nant or soft switching application such as inductio
FGA25N120ANTDTU-F109 Features
* NPT Trench Technology, Positive Temperature Coefficient
* Low Saturation Voltage: VCE(sat), typ = 2.0 V @ IC = 25 A and TC = 25°C
* Low Switching Loss: Eoff, typ = 0.96 mJ @ IC = 25 A and TC = 25°C
* Extremely Enhanced Avalanche Capability Applications
* Ind
Datasheet Details
FGA25N120ANTDTU-F109, FGA25N120
1.34 MB
Npt trench igbt.
This datasheet PDF includes multiple part numbers: FGA25N120ANTDTU-F109, FGA25N120.
Please refer to the document for exact specifications by model.
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