FGA25N120 - NPT Trench IGBT

Product Overview

ON Semiconductor

Datasheet Details

Part number	FGA25N120
Manufacturer	ON Semiconductor
File Size	1.34 MB
Description	NPT Trench IGBT
Datasheet	FGA25N120 Datasheet
Additional preview pages of the FGA25N120 datasheet.

Product details

Description

Using ON Semiconductor's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.

Features

NPT Trench Technology, Positive Temperature Coefficient.
Low Saturation Voltage: VCE(sat), typ = 2.0 V @ IC = 25 A and TC = 25°C.
Low Switching Loss: Eoff, typ = 0.96 mJ @ IC = 25 A and TC = 25°C.
Extremely Enhanced Avalanche Capability.

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Published: Oct 9, 2021 |