FGA25N120
Features
- NPT Trench Technology, Positive Temperature Coefficient
- Low Saturation Voltage: VCE(sat), typ = 2.0 V
@ IC = 25 A and TC = 25°C
- Low Switching Loss: Eoff, typ = 0.96 m J
@ IC = 25 A and TC = 25°C
- Extremely Enhanced Avalanche Capability
Applications
- Induction Heating, Microwave Oven
Description
Using ON Semiconductor's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the reso-nant or soft switching application such as induction heating, microwave oven.
TO-3P
Absolute Maximum Ratings
Symbol
Description
VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current Collector Current Pulsed Collector Current
@ TC = 25°C @ TC = 100°C
Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current
@ TC = 25°C @ TC =...
