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FGA25N120 NPT Trench IGBT

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Description

FGA25N120ANTDTU * 1200 V, 25 A NPT Trench IGBT FGA25N120ANTDTU 1200 V, 25 A NPT Trench IGBT .
Using ON Semiconductor's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performanc.

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Features

* NPT Trench Technology, Positive Temperature Coefficient
* Low Saturation Voltage: VCE(sat), typ = 2.0 V @ IC = 25 A and TC = 25°C
* Low Switching Loss: Eoff, typ = 0.96 mJ @ IC = 25 A and TC = 25°C

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📁 Related Datasheet

FGA25N120AN FGA25N120AND FGA25N120ANTD FGA25N120ANTDTU FGA25N120ANTD_F109 FGA25N120FTD

📌 All Tags

FGA25N120 NPT Trench IGBT ON Semiconductor
ON Semiconductor FGA25N120-like datasheet
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