200 V - 1,000 V Three Phase Bridge 4.0 A - 5.0 A F.
3202F - 200 V - 1/000 V Three Phase Bridge
200 V - 1,000 V Three Phase Bridge 4.0 A - 5.0 A Forward Current 70 ns - 3000 ns Recovery Time 3202 - 3210 3202F - 3210F 3202UF - 3210UF ELECTRICAL .MR27T3202F - 2M-Word x 16-Bit or 4M-Word x 8-Bit P2ROM
OKI Semiconductor MR27T3202F P2ROM2M–Word × 16–Bit or 4M–Word × 8–Bit FEDR27T3202F-02-04 Issue Date: Jul. 9, 2004 FEATURES · 2,097,152-word × 16-bi.GTVA263202FC - Thermally-Enhanced High Power RF GaN on SiC HEMT
GTVA263202FC Thermally-Enhanced High Power RF GaN on SiC HEMT 340 W, 48 V, 2620 – 2690 MHz Description The GTVA263202FC is a 340-watt (P3dB) GaN on S.