344 Datasheet | Specifications & PDF Download

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Data Sheet PRELIMINARY December 2010 AR9344 Highly-Integrated and Feature-Rich IEEE 802.11n 2x2 2.4/5 GHz Premium SoC for Advanced WLAN Platforms Gen

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AONS36344 30V N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS

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CH344 Datasheet 1 USB to Quad Serial Ports Chip CH344 1. Introduction Datasheet Version: 1E http://wch.cn CH344 is a USB bus converter chip, whic

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VDS VGS Max RDS(on) max (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) 30 ± 12 29 37 Application(s) • Load/ System Switch V V mΩ mΩ IRLML6344TRPbF HEXFET

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ATS344 High-Precision Linear Hall-Effect Sensor IC with Two-Wire Current-Mode PWM Output and Integrated Rare-Earth Pellet Package FEATURES AND BENEFI

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LMH0074 www.ti.com SNLS277D – AUGUST 2007 – REVISED APRIL 2013 LMH0074 SMPTE 259M / 344M Adaptive Cable Equalizer Check for Samples: LMH0074 FEATU

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Semiconductor 2SC5344 NPN Silicon Transistor Description • Audio power amplifier application Features www.DataSheet4U.com • High hFE : hFE=100~320

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Model No.LCDT3213440AL MODEL NO : LCDT3213440AL MODEL VERSION: 01 SPEC VERSION : 2.9 ISSUED DATE: 2015-12-08 □Preliminary Specification ■ Fin

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2SK3446 Silicon N Channel Power MOS FET Power Switching REJ03G1100-0800 (Previous: ADE-208-1566F) Rev.8.00 Sep 07, 2005 Features • Capable of 2.5 V g

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1N6309(US)(UB) - 1N6349(US)(UB) 0.5 W Zener Voltage Regulators Features • Zener Voltage Regulators: Axial = no suffix MELF = US, UB • JAN, JANTX, JAN

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2N3439, 2N3440 NPN Low Power, High Voltage Silicon Transistor Features • Available in JAN, JANTX and JANTXV per MIL-PRF-19500/368 • TO-39, TO-5, and U

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Ordering number:ENN544G PNP/NPN Epitaxial Planar Silicon Transistors 2SA1011/2SC2344 High-Voltage Switching, AF Power Amp, 100W Output Predriver App

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WS3442 ProductDescription Features  Critical Conduction Mode Operation  Internal 500V Power MOSFET  No Auxiliary Winding  Ultra Low Operating Curr

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polyfet rf devices GX3442 General Description Polyfet's GAN (on SiC) HEMT power transistors contain no internal matching; making them suitable for b

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