3611 Datasheet | Specifications & PDF Download

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Power Transistors 2SC3611 Silicon NPN epitaxial planar type For video amplifier 8.0+–00..15 Unit: mm 3.2±0.2 ■ Features φ 3.16±0.1 3.8±0.3 11.0±

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sr-: Peripheral/Power Drivers w 0) LM3611, LM3612, LM3613, LM3614 dual peripheral drivers general description features The LM3611 series of d

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30V P-Channel MOSFETs PDN3611S General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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UC1611 UC3611 Quad Schottky Diode Array FEATURES • • • • • • • Matched, Four-Diode Monolithic Array High Peak Current Low-Cost MINIDIP Package Low-Fo

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General Purpose Panel/Plug-in Relays Multimode Relay MT n 2/3 pole 10A, 2 form C (CO) or 3 form C (CO) contacts n DC and AC coils n Mechanical indicat

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JAN and JANTX 1N3611 thru 1N3614 and 1N3957 Patented* Vishay Semiconductors formerly Glass Passivated Rectifiers DO-204AL (EG1) TARY QUALI Rever

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www.DataSheet4U.com 2SK3611-01MR FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driv

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Aluminum electrolytic capacitors Capacitors with multi-pin terminals Series/Type: Date: B43611 March 2023  TDK Electronics AG 2023. Reproduction,

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User’s Manual V850ES/Fx3-L 32-bit Single-Chip Microcontroller Hardware V850ES/FE3-L: V850ES/FF3-L: V850ES/FG3-L: µPD70F3610 µPD70F3615 µPD70F3620 µPD7

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Features n 10A Output Current n Wide VIN Range = 4.5V to 32V (36V Maximum) n Internal N-Channel MOSFETs n True Current Mode Control n Optimized for Hi

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FAN73611_OP — Single-Channel High-Side Gate Drive IC May 2024 FAN73611_OP Single-Channel High-Side Gate Drive IC Features  Floating Channel for Bo

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CXK77B3611AGB -5/6 High Speed Bi-CMOS Synchronous Static RAM Description The CXK77B3611AGB-5/6 is a high speed 1M bit Bi-CMOS synchronous static RAM o

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C&K RTA Series 1–4 Poles Coded Rotary Switches Features/Benefits • PCB or hand soldering versions • Bushing mounting • Multiple poles • Decimal and he

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2N3611 3614 thru 2N (GERMANIUM) PNP germanium power transistors for switching and amplifier applications. CASE 11 (TO-3) CASE 4-04 (TO-41) MAXIMU

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UC1611 UC3611 SLUS338A – JUNE 1993 – REVISED MAY 2001 QUAD SCHOTTKY DIODE ARRAY FEATURES D Matched, Four-Diode Monolithic Array D High Peak Current

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isc N-Channel MOSFET Transistor 2SK3611-01MR FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Static Drain-Source

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