isc Silicon PNP Power Transistor 3CD834 DESCRIPT.
INCHANGE
14
3CD834 - PNP Transistor
isc Silicon PNP Power Transistor 3CD834 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Low Collector-Emitter Saturation Vo.
Dayan Technology
8
3CD834 - DIODE
Dayan Technology Industry Co., Ltd. Shenzhen 3CD834 1. 2. 3. TO-220 4. 5. D880 Ta=25 VCBO VCEO VEBO IC PC Tj Tstg -120 -70 -7 -3 1.5 30 150 -55~150.