3DD200 Datasheet | Specifications & PDF Download

3DD200 Silicon Power Transistor

isc Silicon NPN Power Transistor INCHANGE Semicon.

isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD200 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·DC Current

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isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·High DC Current Gain-hFE=15(Min)@IC = 8A ·Low Saturation Voltage- : VCE(

Rating: 1 ★ (4 votes)