3DD200 Silicon Power Transistor

Inchange

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD200 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min. DC Current Gain- : hFE= 30~120(Min. Collector-Emitter Saturation Vo.

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Datasheet Specifications

Part number: 3DD200
Manufacturer: Inchange
File Size: 207.95 KB
Datasheet: 3DD200_Inchange.pdf
Description: Silicon Power Transistor

Applications

* Designed for B&W TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A PC Collector Power Dis

3DD200 Distributors

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3DD200 Silicon Power Transistor Inchange

Inchange 3DD200-like datasheet