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3DD201 Datasheet - Inchange

3DD201 Silicon Power Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.) *DC Current Gain- : hFE= 40~120(Min.)@IC= 2A *Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 5A *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Design.

3DD201 Datasheet (204.43 KB)

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Datasheet Details

Part number:

3DD201

Manufacturer:

Inchange

File Size:

204.43 KB

Description:

Silicon power transistor.

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3DD201 Silicon Power Transistor Inchange

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