3DD201 Silicon Power Transistor

Inchange

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min. DC Current Gain- : hFE= 40~120(Min. Collector-Emitter Saturation Vo.

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Datasheet Specifications

Part number: 3DD201
Manufacturer: Inchange
File Size: 204.43 KB
Datasheet: 3DD201_Inchange.pdf
Description: Silicon Power Transistor

Applications

* Designed for TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A PC Collector Power Dissipa

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3DD201 Silicon Power Transistor Inchange

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