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3DD303B

Silicon Power Transistor

3DD303B General Description


*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min)
*Collector-Emitter Saturation Voltage- : VCE(sat)= 0.6V(Max) @IC= 0.5A
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Designed for B/W TV vertical output applications. ABSO.

3DD303B Datasheet (201.98 KB)

Preview of 3DD303B PDF

Datasheet Details

Part number:

3DD303B

Manufacturer:

Inchange

File Size:

201.98 KB

Description:

Silicon power transistor.

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