3DD303B Silicon Power Transistor

Inchange

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min). Collector-Emitter Saturation Voltage- : VCE(sat)= 0. Minimum.

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Datasheet Specifications

Part number: 3DD303B
Manufacturer: Inchange
File Size: 201.98 KB
Datasheet: 3DD303B_Inchange.pdf
Description: Silicon Power Transistor

Applications

* Designed for B/W TV vertical output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Collector Power Dissipation

3DD303B Distributors

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3DD303B Silicon Power Transistor Inchange

Inchange 3DD303B-like datasheet