3DD301D Silicon Power Transistor

Inchange

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min). Collector-Emitter Saturation Voltage- : VCE(sat)= 1. Minimum.

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3DD301D Datasheet Preview — Preview of 3DD301D PDF

Datasheet Specifications

Part number: 3DD301D
Manufacturer: Inchange
File Size: 201.75 KB
Datasheet: 3DD301D_Inchange.pdf
Description: Silicon Power Transistor

Applications

* Designed for B/W TV vertical output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Collector Power Dissipation

3DD301D Distributors

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3DD301D Silicon Power Transistor Inchange

Inchange 3DD301D-like datasheet