3DD301D Datasheet - Inchange

3DD301D - Silicon Power Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) *Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for B/W TV vertical output applications. ABSOL.

3DD301D_Inchange.pdf

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Datasheet Details

Part number:

3DD301D

Manufacturer:

Inchange

File Size:

201.75 KB

Description:

Silicon power transistor.

3DD301D Distributor

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3DD301D Silicon Power Transistor Inchange