3DD301C Datasheet - Inchange

3DD301C, Silicon Power Transistor

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min). Collector-Emitter Saturation Voltage- : VCE(sat)= 2. Minimum.

3DD301C_Inchange.pdf

3DD301C Datasheet Preview — Preview of 3DD301C PDF

Datasheet Details

Part number:

3DD301C

Manufacturer:

Inchange

File Size:

201.76 KB

Description:

Silicon Power Transistor

Applications

* Designed for B/W TV vertical output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Collector Power Dissipation

3DD301C Distributors

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3DD301C Silicon Power Transistor Inchange

Inchange 3DD301C-like datasheet