Datasheet4U Logo Datasheet4U.com

3DD301C Datasheet - Inchange

3DD301C Silicon Power Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) *Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max) @IC= 3A *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for B/W TV vertical output applications. ABSOL.

3DD301C_Inchange.pdf

Preview of 3DD301C PDF
3DD301C Datasheet Preview Page 2

Datasheet Details

Part number:

3DD301C

Manufacturer:

Inchange

File Size:

201.76 KB

Description:

Silicon power transistor.

📁 Related Datasheet

3DD3010A1 Silicon NPN Transistor (Huajing Microelectronics)

3DD3015A1 Silicon NPN Transistor (Huajing Microelectronics)

3DD3015A1-H Silicon NPN bipolar transistor (Huajing Microelectronics)

3DD3015A3 Silicon NPN Transistor (Huajing Microelectronics)

3DD301B Silicon Power Transistor (Inchange)

3DD301D Silicon Power Transistor (Inchange)

3DD3020A3 Silicon NPN Transistor (Huajing Microelectronics)

3DD3020A3-H Silicon NPN bipolar transistor (Huajing Microelectronics)

TAGS

3DD301C 3DD301C Silicon Power Transistor Inchange

3DD301C Distributor