3DD303C Silicon Power Transistor

Inchange

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min). Collector-Emitter Saturation Voltage- : VCE(sat)= 1. Minimum.

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Datasheet Specifications

Part number: 3DD303C
Manufacturer: Inchange
File Size: 206.70 KB
Datasheet: 3DD303C_Inchange.pdf
Description: Silicon Power Transistor

Applications

* Designed for B/W TV vertical output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Collector Power Dissipation

3DD303C Distributors

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3DD303C Silicon Power Transistor Inchange

Inchange 3DD303C-like datasheet