3DD301B Silicon Power Transistor

Inchange

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min). Collector-Emitter Saturation Voltage- : VCE(sat)= 2. Minimum L.

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Datasheet Specifications

Part number: 3DD301B
Manufacturer: Inchange
File Size: 202.55 KB
Datasheet: 3DD301B_Inchange.pdf
Description: Silicon Power Transistor

Applications

* Designed for B/W TV vertical output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous PC Collector Power Dissipation @

3DD301B Distributors

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3DD301B Silicon Power Transistor Inchange

Inchange 3DD301B-like datasheet