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3DD301B Datasheet - Inchange

3DD301B Silicon Power Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) *Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max) @IC= 3A *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for B/W TV vertical output applications. ABSOLU.

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Datasheet Details

Part number:

3DD301B

Manufacturer:

Inchange

File Size:

202.55 KB

Description:

Silicon power transistor.

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3DD301B 3DD301B Silicon Power Transistor Inchange

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