3DD301B
Inchange
202.55kb
Silicon power transistor.
TAGS
📁 Related Datasheet
3DD3010A1 - Silicon NPN Transistor
(Huajing Microelectronics)
NPN
○R
3DD3010A1
1 :
3DD3010A1 NPN ,, ,、
。
:TO-92 , RoHS 。
VCEO IC Ptot (Ta=25℃)
2 :
TO-92
480 0.5 0.8
V A W
●
●
● ● ●
1 2 3
1. B.
3DD3015A1 - Silicon NPN Transistor
(Huajing Microelectronics)
NPN
○R
3DD3015A1
1 :
3DD3015A1 NPN ,,
,、 BVCEO
。 :TO-92, RoHS 。
IC Ptot (Ta=25℃)
2 :
TO-92
450 1 0.8
V A W
● ● ● ● ●
3 :
、, 。
1 2.
3DD3015A1-H - Silicon NPN bipolar transistor
(Huajing Microelectronics)
NPN
3DD3015 A1-H
○R
3DD3015 A1-H NPN , , , 、 。
● ● ● ● ●
● ● ●
VCEO IC
Ptot (Ta=25℃)
450 1 0.8
V A W
TO-92
-10.
3DD3015A3 - Silicon NPN Transistor
(Huajing Microelectronics)
NPN
3DD3015 A3
○R
3DD3015 A3 NPN , , , 、 。
● ● ● ● ●
● ● ●
VCEO IC
Ptot (Tc=25℃)
450 1.2 25
V A W
TO-251
-10℃~40.
3DD301C - Silicon Power Transistor
(Inchange)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min) ·Collector-Emitter Saturation Voltage-
: VCE.
3DD301D - Silicon Power Transistor
(Inchange)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min) ·Collector-Emitter Saturation Voltage-
: VCE.
3DD3020A3 - Silicon NPN Transistor
(Huajing Microelectronics)
NPN
○R
3DD3020A3
1 :
3DD3020A3 NPN , ,, ,、。 :TO-251, ROHS 。
2 :
● ● ● ● ●
3 :
、, 。
VCEO IC Ptot(TC=25℃)
450 1.5 30
TO-251
V A W
12 3
.
3DD3020A3-H - Silicon NPN bipolar transistor
(Huajing Microelectronics)
.
3DD3020A4 - Silicon NPN bipolar transistor
(Huajing Microelectronics)
.
3DD3020A6 - Silicon NPN Transistor
(Huajing Microelectronics)
NPN
○R
3DD3020A6
1 :
3DD3020A6 NPN ,,
,,
VCEO
、。 :TO-126, RoHS 。
IC Ptot(TC=25℃)
2 :
TO-126
450 1.5 50
V A W
●
●
● ● ●
1 2 3
1.