3DD208 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min. DC Current Gain- : hFE= 30~250(Min. Collector-Emitter Saturation.

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Datasheet Specifications

Part number: 3DD208
Manufacturer: Inchange Semiconductor
File Size: 202.44 KB
Datasheet: 3DD208-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for switching regulator and power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A PC Colle

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3DD208 Silicon NPN Power Transistor Inchange Semiconductor

Inchange Semiconductor 3DD208-like datasheet