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3DD208 - Silicon NPN Power Transistor

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Datasheet Details

Part number
3DD208
Manufacturer
Inchange Semiconductor
File Size
202.44 KB
Datasheet
3DD208-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

3DD208 Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.). DC Current Gain- : hFE= 30~250(Min.)@IC= 0.5A. Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC= 1A. Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor 3DD208-like datasheet

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