3DD101A Datasheet - Inchange Semiconductor

Datasheet Details

Part number:

3DD101A

Manufacturer:

Inchange Semiconductor

File Size:

191.00 KB

Description:

Silicon NPN Power Transistor

isc Silicon NPN Power Transistor DESCRIPTION *Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) *DC Current Gain- : hFE= 20(Min.)@IC= 2A *Collector-Emitter Saturation Voltage- : VCE(sat)= 0.8V(Max)@ IC= 2.5A *Minimum Lot-to-Lot variations for robust device performance and

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3DD101A, Silicon NPN Power Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) *DC Current Gain- : hFE= 20(Min.)@IC= 2A *Collector-Emitter Saturation Voltage- : VCE(sat)= 0.8V(Max)@ IC= 2.5A *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed

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