3DD102C Datasheet, Transistor, Inchange Semiconductor

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3DD102C

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Inchange Semiconductor

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📄 Datasheet

Description:

Silicon npn power transistor.

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.)

DC Current Gain- : hFE= 20(Min.)@IC= 2A

Collec

3DD102C Application

• Applications
• Designed for power amplifier , DC Transform T-Shirt
• SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage

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3DD102C

Inchange Semiconductor

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