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3DD102C

Silicon NPN Power Transistor

3DD102C General Description


*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.)
*DC Current Gain- : hFE= 20(Min.)@IC= 2A
*Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 2.5A
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Designe.

3DD102C Datasheet (209.37 KB)

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Datasheet Details

Part number:

3DD102C

Manufacturer:

Inchange Semiconductor

File Size:

209.37 KB

Description:

Silicon npn power transistor.

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