3DD102C Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min. DC Current Gain- : hFE= 20(Min. Collector-Emitter Saturation Voltag.

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Datasheet Specifications

Part number: 3DD102C
Manufacturer: Inchange Semiconductor
File Size: 209.37 KB
Datasheet: 3DD102C-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for power amplifier , DC Transform T-Shirt
* SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous 5 A PC Collector Power Dissipation@TC=75℃ 50 W TJ

3DD102C Distributors

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3DD102C Silicon NPN Power Transistor Inchange Semiconductor

Inchange Semiconductor 3DD102C-like datasheet