3DD155 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
DC Current Gain : hFE= 15-120@IC= 1A. Collector-Emitter Saturation Voltage : VCE(sat)= 1. Minimum Lot-to-Lot variations f.

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Datasheet Specifications

Part number: 3DD155
Manufacturer: Inchange Semiconductor
File Size: 256.38 KB
Datasheet: 3DD155-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for B&W TV horizontal output , regulated power supply and power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE A 80 B 150 VCBO Collector-Base Voltage C 200 D 250 E 350 F 400 A 50 B 100 VCEO Collector-Emitter Voltage C 150 D 200 E 250 F

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3DD155 Silicon NPN Power Transistor Inchange Semiconductor

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