3DD101B Silicon NPN Power Transistor

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD101B .
With TO-3 packaging. Large collector current. Low collector saturation voltage. High power dissipation. Minimum Lot-to-Lot variat.

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Datasheet Specifications

Part number: 3DD101B
Manufacturer: Inchange Semiconductor
File Size: 183.28 KB
Datasheet: 3DD101B-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for use in DC-DC converter
* Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous 5 A PD To

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Silicon NPN Power Transistor Inchange Semiconductor

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