3DD102 Silicon NPN Power Transistor

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD102 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min. DC Current Gain- : hFE= 20(Min. Collector-Emitter Saturation Voltag.

📥 Download Datasheet

3DD102 Datasheet Preview — Preview of 3DD102 PDF

Datasheet Specifications

Part number: 3DD102
Manufacturer: Inchange Semiconductor
File Size: 151.04 KB
Datasheet: 3DD102-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for power amplifier , DC Transform T-Shirt
* SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6V IC Collector Current-Continuous 5A PC Collector Power Dissipation@TC=75℃ 50 W TJ Junction T

3DD102 Distributors

📁 Related Datasheet

3DD102D 3DD10 3DD100 3DD100A 3DD100B 3DD100C

📌 All Tags

3DD102 Silicon NPN Power Transistor Inchange Semiconductor

Inchange Semiconductor 3DD102-like datasheet