The 3DD102 by Inchange Semiconductor is a Silicon NPN Power Transistor. Below is the official datasheet preview.
| Part number | 3DD102 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 151.04 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
 3DD102-InchangeSemiconductor.pdf
|
|
|
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) DC Current Gain- : hFE= 20(Min.)@IC= 2A Collector-Emitter Saturation Voltage- : VCE(sat)= 0.8V(Max)@ IC= 2.5A APPLICATIONS Designed for power amplifier , DC Transform T-Shirt SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6V IC Collector Current-Continuous 5A PC Collector Power Dissipation@TC=75℃ 50 W TJ Junction Te
📁 3DD102 Similar Datasheet
