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3DD102

Silicon NPN Power Transistor

3DD102 General Description


*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.)
*DC Current Gain- : hFE= 20(Min.)@IC= 2A
*Collector-Emitter Saturation Voltage- : VCE(sat)= 0.8V(Max)@ IC= 2.5A APPLICATIONS
*Designed for power amplifier , DC Transform T-Shirt
* SYMBOL PARAMETER VALUE UNIT VCBO .

3DD102 Datasheet (151.04 KB)

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Datasheet Details

Part number:

3DD102

Manufacturer:

Inchange Semiconductor

File Size:

151.04 KB

Description:

Silicon npn power transistor.

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