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3DD102 Silicon NPN Power Transistor

3DD102 Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD102 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min. DC Current Gain- : hFE= 20(Min. Collector-Emitter Saturation Voltag.

3DD102 Applications

* Designed for power amplifier , DC Transform T-Shirt
* SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6V IC Collector Current-Continuous 5A PC Collector Power Dissipation@TC=75℃ 50 W TJ Junction T

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Datasheet Details

Part number
3DD102
Manufacturer
Inchange Semiconductor
File Size
151.04 KB
Datasheet
3DD102-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

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Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor 3DD102-like datasheet