3DD102 Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·DC Current Gain- : hFE= 20(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage-.
| Part number | 3DD102 |
|---|---|
| Datasheet | 3DD102-InchangeSemiconductor.pdf |
| File Size | 151.04 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·DC Current Gain- : hFE= 20(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage-.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| Shaanxi Qunli Electric | 3DD102 | NPN Silicon Low Frequency High Power Transistor | Shaanxi Qunli Electric |
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3DD102D | NPN Transistor | INCHANGE |