Datasheet Details
- Part number
- 3DD102A
- Manufacturer
- Inchange Semiconductor
- File Size
- 209.11 KB
- Datasheet
- 3DD102A-InchangeSemiconductor.pdf
- Description
- Silicon NPN Power Transistor
3DD102A Description
isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min.
DC Current Gain-
: hFE= 20(Min.
Collector-Emitter Saturation Voltag.
3DD102A Applications
* Designed for power amplifier , DC Transform T-Shirt
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
4
V
IC
Collector Current-Continuous
5
A
PC
Collector Power Diss
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