3DD102B Silicon NPN Power Transistor

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD102B .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min. DC Current Gain- : hFE= 20(Min. Collector-Emitter Saturation Voltag.

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Datasheet Specifications

Part number: 3DD102B
Manufacturer: Inchange Semiconductor
File Size: 185.16 KB
Datasheet: 3DD102B-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for power amplifier,DC-DC converter and regulated power supply applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 4V IC Collector Current-Continuous 5

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Silicon NPN Power Transistor Inchange Semiconductor

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