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3DD102B Datasheet - Inchange Semiconductor

3DD102B Silicon NPN Power Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.) *DC Current Gain- : hFE= 20(Min.)@IC= 2A *Collector-Emitter Saturation Voltage- : VCE(sat)= 0.8V(Max)@ IC= 2.5A APPLICATIONS *Designed for power amplifier,DC-DC converter and regulated power supply applications. ABSOLUTE .

3DD102B Datasheet (185.16 KB)

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Datasheet Details

Part number:

3DD102B

Manufacturer:

Inchange Semiconductor

File Size:

185.16 KB

Description:

Silicon npn power transistor.

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3DD102B Silicon NPN Power Transistor Inchange Semiconductor

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