* 3DD1555PNPN
* 3DD1555P is high breakdown ， ： 、, 。 voltage of NPN bipolar transistor. The main process of manufacture: high voltage planar process, triple diffused process etc., adoption of （RoHS）。 fully plastic packge. RoHS product. EQUIVALENT CIRCUIT ORDER MESSAGE Order codes
3DD1555P Datasheet (209.94 KB)
3DD1555P
JILIN SINO
209.94 KB
Case-rated bipolar transistor.
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555P FOR LOW FREQUENCY
R
3DD1555P
MAIN CHARACTERISTICS
Package TO-3P(H)IS
BVCBO IC VCE(sat) tf
1500 .
📁 Related Datasheet
3DD1555 - CASE-RATED BIPOLAR TRANSISTOR
(JILIN SINO)
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555 FOR LOW FREQUENCY
R
3DD1555
MAIN CHARACTERISTICS
BVCBO IC VCE(sat) tf
1500 V 5A 5 V(max) 1 s(max)
P.
3DD1555A - CASE-RATED BIPOLAR TRANSISTOR
(JILIN SINO)
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555A FOR LOW FREQUENCY
R
3DD1555A
MAIN CHARACTERISTICS
BVCBO IC VCE(sat) tf
1500 V 8A 3 V(max) 0.6 s(max.
3DD155 - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
DESCRIPTION ·DC Current Gain
: hFE= 15-120@IC= 1A ·Collector-Emitter Saturation Voltage
: VCE(sat)= 1.0V(Max)@ IC= 1.
3DD15 - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min.) ·DC Current Gain-
: hFE= 30~250(Min.)@IC= 2A.
3DD1545 - NPN Transistor
(Huajing Microelectronics)
1
3DD1545 NPN
,
21
3DD1545
2
2.1
2.2
TO-3P(H)IS
Tamb= 25
-
Ta=25 Tc=25
VCE0
600
V
VCB0
1500
V
VEB0
5
V
IC
5
A
3
Ptot
50
W
Tj
.
3DD157 - Low-frequency silicon NPN power transistor
(ETC)
3DD157 NPN
PCM ICM Tjm Tstg
Rth
V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO VBEsat
VCEsat
hFE
TC=75℃
VCE=10V IC=1A
ICB=3mA ICE=3mA IEB=1m.
3DD159A - NPN Transistor
(INCHANGE)
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DD159A
DESCRIPTION ·With TO-3 packaging ·Large collector current .
3DD159B - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
3DD159B
DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation .
