.
JILIN SINO
D1555 - CASE-RATED BIPOLAR TRANSISTOR
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555 FOR LOW FREQUENCY R 3DD1555 MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 1500 V 5A 5 V(max) 1 s(max.
JILIN SINO-MICROELECTRONICS
3DD5017 - CASE-RATED BIPOLAR TRANSISTOR
R µÍÆ·Å´ó¹Ü¿Ç¶î¨ÄË«¼Ð;§Ìå CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5017 FOR LOW FREQUENCY 3DD5017 Ö÷Òª²ÎÊý BVCBO IC VCE(sat) tf ÓÃ; z ²ÊÉ«µçÊÓ»ú¿.
JILIN SINO
3DD5038P - CASE-RATED BIPOLAR TRANSISTOR
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5038P FOR LOW FREQUENCY R 3DD5038P MAIN CHARACTERISTICS Package TO-3P(H)IS BVCBO IC VCE(sat) Tf 1200 .
JILIN SINO-MICROELECTRONICS
3DD5011 - CASE-RATED BIPOLAR TRANSISTOR
CASE-RATED BIPOLAR TRANSISTOR 3DD5011 FOR LOW FREQUENCY AMPLIFICATION R 3DD5011 MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 900V 10 A 0.5 V(max) 0..
JILIN SINO-MICROELECTRONICS
3DD5023 - CASE-RATED BIPOLAR TRANSISTOR
R µÍÆ·Å´ó¹Ü¿Ç¶î¨ÄË«¼Ð;§Ìå CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5023 FOR LOW FREQUENCY 3DD5023 Ö÷Òª²ÎÊý BVCBO IC VCE(sat) tf ÓÃ; z ²ÊÉ«µçÊÓ»úÐ.
JILIN SINO-MICROELECTRONICS
3DD5287 - CASE-RATED BIPOLAR TRANSISTOR
R µÍÆ·Å´ó¹Ü¿Ç¶î¨ÄË«¼Ð;§Ìå CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5287 FOR LOW FREQUENCY 3DD5287 Ö÷Òª²ÎÊý BVCBO IC VCE(sat) tf ÓÃ; z ²ÊÉ«µçÊÓ»ú¿.
ETC
3DD2499 - Low-frequency amplification case - rated bipolar transistors
www.DataSheet4U.com »ª¾§·ÖÁ¢Æ÷¼þ 3DD2499 µÍÆ ·Å´ó¹Ü¿Ç¶î ¨Ë«¼ Ð;§Ìå¹Ü 1 ãµØÌëÓöÊŸ 3DD2499 ¹è ¹ ÂÏçÈãµØÌäÆ ß¸¹Ñ絩´÷» ì¿È¶ÙËعª¿ ͵ ½¹Ñͺ¥± úÔÐØÌ÷.
JILIN SINO
3DD5036P - CASE-RATED BIPOLAR TRANSISTOR
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5036P FOR LOW FREQUENCY R 3DD5036P MAIN CHARACTERISTICS Package TO-3P(H)IS BVCBO IC VCE(sat) tf 1500 .
JILIN SINO
3DD5032P - CASE-RATED BIPOLAR TRANSISTOR
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5032P FOR LOW FREQUENCY R 3DD5032P MAIN CHARACTERISTICS Package TO-3P(H)IS BVCBO IC VCE(sat) tf 1500 .
JILIN SINO
3DD5024P - CASE-RATED BIPOLAR TRANSISTOR
CASE-RATED BIPOLAR TRANSISTOR 3DD5024P FOR LOW FREQUENCY AMPLIFICATION R 3DD5024P MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 1500V 8.0 A 3.0V(max).
JILIN SINO
3DD5023P - CASE-RATED BIPOLAR TRANSISTOR
R CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5023 FOR LOW FREQUENCY 3DD5023P MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 1500 V 6A 5 V(max) 1 μs(max.
JILIN SINO
3DD5017P - CASE-RATED BIPOLAR TRANSISTOR
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5017P FOR LOW FREQUENCY R 3DD5017P MAIN CHARACTERISTICS Package TO-3P(H)IS BVCBO IC VCE(sat) tf 1000 .
JILIN SINO
3DD1555 - CASE-RATED BIPOLAR TRANSISTOR
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555 FOR LOW FREQUENCY R 3DD1555 MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 1500 V 5A 5 V(max) 1 s(max) P.
JILIN SINO
3DD1555A - CASE-RATED BIPOLAR TRANSISTOR
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555A FOR LOW FREQUENCY R 3DD1555A MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 1500 V 8A 3 V(max) 0.6 s(max.
JILIN SINO
3DD1555P - CASE-RATED BIPOLAR TRANSISTOR
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555P FOR LOW FREQUENCY R 3DD1555P MAIN CHARACTERISTICS Package TO-3P(H)IS BVCBO IC VCE(sat) tf 1500 .
WEIFANG HUICHUAN
EB13009 - Case rated low frequency amplification bipolar transistor
WEIFANG HUICHUAN ELECTRONIC CO.,LTD. EB13009 13009 1、 13009 NPN ，、，。： 。。 。 。 ，。 ：TO-220 2、 2.1 ，Ta=25℃ 400 700 9 12 2 150 -55-150 V V .
XINSUN
W2XN9386 - Low-frequency amplification case - rated bipolar transistors
W2XN9386 XS-J-055 13-A2-03 1/3 1 1.1 W2XN9386 、、 。 1.2 z z ， z 2 （mm×mm） 3.86×3.86 （µm） *（µm） 250±20 74 572×1064 (µ.
XINSUN
W2XN9500 - Low-frequency amplification case - rated bipolar transistors
W2XN9500 XS-J-057 13-A2-03 1/3 1 1.1 W2XN9500 ，、。 1.2 z ， z z 2 （mm×mm） 5.00×5.00 （µm） *（µm） 250±20 60 (µm2) 780×1.
Jilin Sino
3DD2101 - CASE-RATED BIPOLAR TRANSISTOR
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2101 FOR LOW FREQUENCY R 3DD2101 MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 900 V 5A 0.5 V(max) 0.5 s(max).
Jilin Sino
3DD2103 - CASE-RATED BIPOLAR TRANSISTOR
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2103 FOR LOW FREQUENCY R 3DD2103 MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 900 V 6A 0.5 V(max) 0.5 s(max).
