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CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555 FOR LOW FREQUENCY R 3DD1555 MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 1500 V 5A 5 V(max) 1 s(max

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R µÍÆ·Å´ó¹Ü¿Ç¶î¨ÄË«¼Ð;§Ìå CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2102 FOR LOW FREQUENCY 3DD2102 Ö÷Òª²ÎÊý BVCBO IC VCE(sat) tf ÓÃ; z ²ÊÉ«µçÊÓ»úÐ

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R 3DD 209L µÍƵ·Å´ó¹Ü¿Ç¶î¶¨µÄË«¼«Ð;§Ìå¹Ü D209L ²úÆ·ÌØÐÔ ¡ô ¸ßÄÍѹ ¡ô ¸ßµçÁ÷ÈÝÁ¿ ¡ô ¸ß¿ª¹ØËÙ¶È ¡ô ¸ß¿É¿¿ÐÔ Ö÷ÒªÓÃ; ¡ô ¸ßƵ¿ª¹ØµçÔ´ ¡ô µç×ÓÕòÁ÷Æ÷ ¡

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R µÍÆ·Å´ó¹Ü¿Ç¶î¨ÄË«¼Ð;§Ìå CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5023 FOR LOW FREQUENCY 3DD5023 Ö÷Òª²ÎÊý BVCBO IC VCE(sat) tf ÓÃ; z ²ÊÉ«µçÊÓ»úÐ

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CASE-RATED BIPOLAR TRANSISTOR 3DD5011 FOR LOW FREQUENCY AMPLIFICATION R 3DD5011 MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 900V 10 A 0.5 V(max) 0.

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R CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5023 FOR LOW FREQUENCY 3DD5023P MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 1500 V 6A 5 V(max) 1 μs(max

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CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5017P FOR LOW FREQUENCY R 3DD5017P MAIN CHARACTERISTICS Package TO-3P(H)IS BVCBO IC VCE(sat) tf 1000

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R µÍÆ·Å´ó¹Ü¿Ç¶î¨ÄË«¼Ð;§Ìå CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5017 FOR LOW FREQUENCY 3DD5017 Ö÷Òª²ÎÊý BVCBO IC VCE(sat) tf ÓÃ; z ²ÊÉ«µçÊÓ»ú¿

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R µÍÆ·Å´ó¹Ü¿Ç¶î¨ÄË«¼Ð;§Ìå CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5039 FOR LOW FREQUENCY 3DD5039 Ö÷Òª²ÎÊý BVCBO IC VCE(sat) tf ÓÃ; z ²ÊÉ«µçÊÓ»ú¿

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R µÍÆ·Å´ó¹Ü¿Ç¶î¨ÄË«¼Ð;§Ìå CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5287C FOR LOW FREQUENCY 3DD5287C Ö÷Òª²ÎÊý BVCBO IC VCE(sat) tf ÓÃ; z ²ÊÉ«µçÊÓ»

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R µÍÆ·Å´ó¹Ü¿Ç¶î¨ÄË«¼Ð;§Ìå CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2901 FOR LOW FREQUENCY 3DD2901 Ö÷Òª²ÎÊý BVCBO IC VCE(sat) tf ÓÃ; z ²ÊÉ«µçÊÓ»úÐ

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WEIFANG HUICHUAN ELECTRONIC CO.,LTD. EB13009 13009 1、 13009 NPN ，、，。： 。。 。 。 ，。 ：TO-220 2、 2.1 ，Ta=25℃ 400 700 9 12 2 150 -55-150 V V

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W2XN9500 XS-J-057 13-A2-03 1/3 1 1.1 W2XN9500 ，、。 1.2 z ， z z 2 （mm×mm） 5.00×5.00 （µm） *（µm） 250±20 60 (µm2) 780×1

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CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2103 FOR LOW FREQUENCY R 3DD2103 MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 900 V 6A 0.5 V(max) 0.5 s(max)

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CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5038P FOR LOW FREQUENCY R 3DD5038P MAIN CHARACTERISTICS Package TO-3P(H)IS BVCBO IC VCE(sat) Tf 1200

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R µÍÆ·Å´ó¹Ü¿Ç¶î¨ÄË«¼Ð;§Ìå CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5287 FOR LOW FREQUENCY 3DD5287 Ö÷Òª²ÎÊý BVCBO IC VCE(sat) tf ÓÃ; z ²ÊÉ«µçÊÓ»ú¿

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R CASE-RATED BIPOLAR TRANSISTOR 3DD5310 FOR LOW FREQUENCY AMPLIFICATION 3DD5310HF BVCBO IC VCE(sat) tf MAIN CHARACTERISTICS 1000V 10 A 0.5 V(max)

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CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5036P FOR LOW FREQUENCY R 3DD5036P MAIN CHARACTERISTICS Package TO-3P(H)IS BVCBO IC VCE(sat) tf 1500

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CASE-RATED BIPOLAR TRANSISTOR 3DD5024P FOR LOW FREQUENCY AMPLIFICATION R 3DD5024P MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 1500V 8.0 A 3.0V(max)

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CASE-RATED BIPOLAR TRANSISTOR 3DD5308DHF FOR LOW FREQUENCY AMPLIFICATION R 3DD5024(P) BVCBO IC VCE(sat) tf MAIN CHARACTERISTICS 1500V 8.0 A 3.0V(m

(3 views)