3DD5032P - CASE-RATED BIPOLAR TRANSISTOR

JILIN SINO

General Description

of Changes ：201412A 5/5

Key Features

3DD5032PNPN.
3DD5032P is high breakdown ，：、, 。 voltage of NPN bipolar transistor. The main process of manufacture: high voltage planar process, triple diffused process etc. , adoption of （RoHS）。 fully plastic packge. RoHS product.

📥 Download Datasheet

3DD5032P case-rated bipolar transistor by JILIN SINO - Datasheet Preview

Datasheet Details

Part number	3DD5032P
Manufacturer	JILIN SINO
File Size	213.45 KB
Description	CASE-RATED BIPOLAR TRANSISTOR
Datasheet	3DD5032P Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
3DD5032	CASE-RATED BIPOLAR TRANSISTOR	JILIN SINO-MICROELECTRONICS
3DD5031	CASE-RATED BIPOLAR TRANSISTOR	JILIN SINO-MICROELECTRONICS
3DD5036	CASE-RATED BIPOLAR TRANSISTOR	JILIN SINO-MICROELECTRONICS
3DD5038	CASE-RATED BIPOLAR TRANSISTOR	JILIN SINO-MICROELECTRONICS
3DD5039	CASE-RATED BIPOLAR TRANSISTOR	JILIN SINO-MICROELECTRONICS

Other Datasheets by JILIN SINO

Part Number	Description
3DD5036P	CASE-RATED BIPOLAR TRANSISTOR
3DD5038P	CASE-RATED BIPOLAR TRANSISTOR
3DD5017P	CASE-RATED BIPOLAR TRANSISTOR
3DD5023P	CASE-RATED BIPOLAR TRANSISTOR
3DD5024P	CASE-RATED BIPOLAR TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5032P FOR LOW FREQUENCY R 3DD5032P MAIN CHARACTERISTICS Package TO-3P(H)IS BVCBO IC VCE(sat) tf 1500 V 8A 3 V(max) 1 μs(max) ● APPLICATIONS ● Horizontal deflection output for color TV. 1 23 FEATURES ●3DD5032PNPN ● 3DD5032P is high breakdown ，：、, 。 voltage of NPN bipolar transistor. The main process of manufacture: high voltage planar process, triple diffused process etc., adoption of （RoHS）。 fully plastic packge. RoHS product.